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Nakao, Yukiyasu, Watanabe, Shoyu, Miura, Naruhisa, Imaizumi, Masayuki, Oomori, Tatsuo (2008) Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs. Materials Science Forum, 600. 1123-1126 doi:10.4028/www.scientific.net/msf.600-603.1123

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
JournalMaterials Science Forum
AuthorsNakao, YukiyasuAuthor
Watanabe, ShoyuAuthor
Miura, NaruhisaAuthor
Imaizumi, MasayukiAuthor
Oomori, TatsuoAuthor
Year2008 (September)Volume600
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.600-603.1123Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9867553Long-form Identifiermindat:1:5:9867553:1
GUID0
Full ReferenceNakao, Yukiyasu, Watanabe, Shoyu, Miura, Naruhisa, Imaizumi, Masayuki, Oomori, Tatsuo (2008) Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs. Materials Science Forum, 600. 1123-1126 doi:10.4028/www.scientific.net/msf.600-603.1123
Plain TextNakao, Yukiyasu, Watanabe, Shoyu, Miura, Naruhisa, Imaizumi, Masayuki, Oomori, Tatsuo (2008) Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs. Materials Science Forum, 600. 1123-1126 doi:10.4028/www.scientific.net/msf.600-603.1123
In(2008) Materials Science Forum Vol. 600. Trans Tech Publications, Ltd.

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