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Sinke, W.C., Warabisako, T., Miyao, M., Tokuyama, T., Roorda, S. (1989) The structure of nanocrystalline silicon formed by laser-induced explosive crystallization. Applied Surface Science, 36. 460-470 doi:10.1016/0169-4332(89)90941-0

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Reference TypeJournal (article/letter/editorial)
TitleThe structure of nanocrystalline silicon formed by laser-induced explosive crystallization
JournalApplied Surface Science
AuthorsSinke, W.C.Author
Warabisako, T.Author
Miyao, M.Author
Tokuyama, T.Author
Roorda, S.Author
Year1989 (January)Volume36
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90941-0Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9894631Long-form Identifiermindat:1:5:9894631:4
GUID0
Full ReferenceSinke, W.C., Warabisako, T., Miyao, M., Tokuyama, T., Roorda, S. (1989) The structure of nanocrystalline silicon formed by laser-induced explosive crystallization. Applied Surface Science, 36. 460-470 doi:10.1016/0169-4332(89)90941-0
Plain TextSinke, W.C., Warabisako, T., Miyao, M., Tokuyama, T., Roorda, S. (1989) The structure of nanocrystalline silicon formed by laser-induced explosive crystallization. Applied Surface Science, 36. 460-470 doi:10.1016/0169-4332(89)90941-0
In(n.d.) Applied Surface Science Vol. 36. Elsevier BV

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Sinke, W.C., Polman, A., Roorda, S., Stolk, P.A. (1989) Explosive crystallization of amorphous silicon: triggering and propagation. Applied Surface Science, 43. 128-135 doi:10.1016/0169-4332(89)90201-8
Roorda, S., Sinke, W.C. (1989) Rapid nucleation in pulsed laser heated amorphous Si. Applied Surface Science, 36. 588-596 doi:10.1016/0169-4332(89)90954-9
Sinke, W., Warabisako, T., Miyao, M., Tokuyama, T., Roorda, S., Saris, F.W. (1988) Transient structural relaxation of amorphous silicon. Journal of Non-Crystalline Solids, 99 (2) 308-323 doi:10.1016/0022-3093(88)90439-5
Van Maaren, A.J.P., Krans, R.L., De Haas, E., Sinke, W.C. (1989) Excimer laser induced deposition of tungsten on silicon. Applied Surface Science, 38. 386-396 doi:10.1016/0169-4332(89)90558-8
van Maaren, A.J.P., Krans, R.L., Sinke, W.C. (1990) HF formation in laser-induced CVD of tungsten. Applied Surface Science, 46. 138-142 doi:10.1016/0169-4332(90)90132-j
Polman, A., Roorda, S., Stolk, P.A., Sinke, W.C. (1991) Triggering explosive crystallization of amorphous silicon. Journal of Crystal Growth, 108 (1). 114-120 doi:10.1016/0022-0248(91)90359-d
Eisele, I. (1989) Delta-type doping profiles in silicon. Applied Surface Science, 36. 39-51 doi:10.1016/0169-4332(89)90897-0
Geiler, H.D., Glaser, E., Andrä, G., Wolff, D., Götz, G. (1989) Explosive crystallization phenomena in SOI structures. Applied Surface Science, 36. 632-639 doi:10.1016/0169-4332(89)90959-8
Curcio, F., Ghiglione, G., Musci, M., Nannetti, C. (1989) Synthesis of silicon carbide powders by a CW CO2 laser. Applied Surface Science, 36. 52-58 doi:10.1016/0169-4332(89)90898-2
Stumpff, C., Sigmund, H. (1989) Selective crystallization of silicon layers without seeding and capping layer. Applied Surface Science, 36. 605-613 doi:10.1016/0169-4332(89)90956-2
Klumpp, A., Sigmund, H. (1989) Deposition of high quality SiO2 layers from TEOS by excimer laser. Applied Surface Science, 36. 141-149 doi:10.1016/0169-4332(89)90907-0
 
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