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Heyns, M.M., Krishna Rao, D., De Keersmaecker, R.F. (1989) Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection. Applied Surface Science, 39. 327-338 doi:10.1016/0169-4332(89)90447-9

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Reference TypeJournal (article/letter/editorial)
TitleOxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection
JournalApplied Surface Science
AuthorsHeyns, M.M.Author
Krishna Rao, D.Author
De Keersmaecker, R.F.Author
Year1989 (October)Volume39
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90447-9Search in ResearchGate
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Mindat Ref. ID9894811Long-form Identifiermindat:1:5:9894811:8
GUID0
Full ReferenceHeyns, M.M., Krishna Rao, D., De Keersmaecker, R.F. (1989) Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection. Applied Surface Science, 39. 327-338 doi:10.1016/0169-4332(89)90447-9
Plain TextHeyns, M.M., Krishna Rao, D., De Keersmaecker, R.F. (1989) Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection. Applied Surface Science, 39. 327-338 doi:10.1016/0169-4332(89)90447-9
In(n.d.) Applied Surface Science Vol. 39. Elsevier BV

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Dooms, E.E., Heyns, M.M., De Keersmaecker, R.F. (1989) Characterization of 30 nm nitrided oxides fabricated by rapid thermal nitridation. Applied Surface Science, 39. 227-237 doi:10.1016/0169-4332(89)90437-6
Oude Elferink, J.B., Habraken, F.H.P.M., Van Der Weg, W.F., Dooms, E., Heyns, M., De Keersmaecker, R. (1989) Rapid thermal nitridation of SiO2 films. Applied Surface Science, 39. 219-226 doi:10.1016/0169-4332(89)90436-4
Houssa, M., Autran, J.L., Heyns, M.M., Stesmans, A. (2003) Model for defect generation at the (1 0 0)Si/SiO2 interface during electron injection in MOS structures. Applied Surface Science, 212. 749-752 doi:10.1016/s0169-4332(03)00042-4
Haywood, S.K., Heyns, M.M., De Keersmaecker, R.F. (1987) The statistics of dielectric breakdown in MOS capacitors under static and dynamic voltage stress. Applied Surface Science, 30. 325-332 doi:10.1016/0169-4332(87)90109-7
Lyon, S.A. (1989) Interface states generated by the injection of electrons and holes into SiO2. Applied Surface Science, 39. 552-564 doi:10.1016/0169-4332(89)90471-6
Maex, Karen, De Keersmaecker, Roger (1989) Preface. Applied Surface Science, 38. doi:10.1016/0169-4332(89)90511-4
Buchanan, D.A., Fischetti, M.V., Dimaria, D.J. (1989) Coulombic and neutral electron trapping centers in SiO2. Applied Surface Science, 39. 420-428 doi:10.1016/0169-4332(89)90459-5
Girisch, R., Mertens, R.P., de Keersmaecker, R.F. (1987) A new method to determine Si/SiO2 interface recombination parameters using a gate-controlled point-junction diode under illumination. Applied Surface Science, 30. 127-133 doi:10.1016/0169-4332(87)90084-5
Ye, Qiu-Yi, Koch, F. (1989) Modification of the SiSiO2 interface by the degradation-annealing cycle. Applied Surface Science, 39. 339-347 doi:10.1016/0169-4332(89)90448-0
Andersson, M.O., Engström, O. (1989) Atomic relaxation of SiSiO2 interface states measured by a photo-depopulation technique. Applied Surface Science, 39. 289-300 doi:10.1016/0169-4332(89)90443-1
Yasuda, Y., Zaima, S., Sakashita, M. (1990) Studies on charge trapping and interface state generation in MOS capacitors at low temperatures. Applied Surface Science, 41. 420-424 doi:10.1016/0169-4332(89)90095-0
 
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