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Iwami, M., Kusaka, M., Hirai, M., Kubota, M., Tochihara, H., Murata, Y. (1990) Mechanism of alloy formation due to noble metal deposition on silicon surfaces at room temperature: Chemical bonding model. Applied Surface Science, 41. 97-102 doi:10.1016/0169-4332(89)90039-1

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Reference TypeJournal (article/letter/editorial)
TitleMechanism of alloy formation due to noble metal deposition on silicon surfaces at room temperature: Chemical bonding model
JournalApplied Surface Science
AuthorsIwami, M.Author
Kusaka, M.Author
Hirai, M.Author
Kubota, M.Author
Tochihara, H.Author
Murata, Y.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90039-1Search in ResearchGate
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Mindat Ref. ID9894909Long-form Identifiermindat:1:5:9894909:2
GUID0
Full ReferenceIwami, M., Kusaka, M., Hirai, M., Kubota, M., Tochihara, H., Murata, Y. (1990) Mechanism of alloy formation due to noble metal deposition on silicon surfaces at room temperature: Chemical bonding model. Applied Surface Science, 41. 97-102 doi:10.1016/0169-4332(89)90039-1
Plain TextIwami, M., Kusaka, M., Hirai, M., Kubota, M., Tochihara, H., Murata, Y. (1990) Mechanism of alloy formation due to noble metal deposition on silicon surfaces at room temperature: Chemical bonding model. Applied Surface Science, 41. 97-102 doi:10.1016/0169-4332(89)90039-1
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Iwami, Motohiro, Hirai, Masaaki, Kusaka, Masahiko (1988) Existence of an alloy formation reaction in the noble metal (thin film)-CdS (cleaved surface) contact system at room temperature. Applied Surface Science, 33. 1120-1126 doi:10.1016/0169-4332(88)90425-4
Kawamoto, S., Saitoh, K., Hirai, M., Kusaka, M., Iwami, M. (1992) Photoemission studies of Pd initial adsorption on the Si(100)2 Γ— 1 surface at room temperature using synchrotron radiation. Applied Surface Science, 60. 152-158 doi:10.1016/0169-4332(92)90409-q
Yamauchi, S., Hirai, M., Kusaka, M., Iwami, M., Nakamura, H., Yokota, Y., Watabe, H. (1993) Effect of crystallographic orientation of Si substrates on SPE NiSi2 formation. Applied Surface Science, 70. 461-465 doi:10.1016/0169-4332(93)90561-o
Iwami, M., Kusaka, M., Hirai, M., Nakamura, H. (1990) A new non-destructive analysis of semiconductor heterojunctions with very thin surface layers: An application of soft x-ray spectroscopy to Si-compound (film)/Si (substrate). Applied Surface Science, 41. 57-61 doi:10.1016/0169-4332(89)90033-0
Yamauchi, S., Hasebe, Y., Ohshima, H., Hattori, T., Hirai, M., Kusaka, M., Iwami, M. (1996) Valence band structure of metal silicides modified by argon ion implantation. Applied Surface Science, 100. 522-525 doi:10.1016/0169-4332(96)00332-7
Azatyan, S., Hirai, M., Kusaka, M., Iwami, M. (2004) AES and STM investigations of room temperature Mn deposition onto Si(111) at different deposition rates. Applied Surface Science, 237. 105-109 doi:10.1016/j.apsusc.2004.06.089
Kasaya, M., Yamauchi, S., Hirai, M., Kusaka, M., Iwami, M., Nakamura, H., Watabe, H. (1994) Study of iron silicide formation on Si(111) by soft x-ray emission spectroscopy. Applied Surface Science, 75. 110-114 doi:10.1016/0169-4332(94)90145-7
Jikimoto, T., Heck, C., Komoku, K., Hirai, M., Kusaka, M., Iwami, M. (1996) Co overlayer formation process onSi(100)2 Γ— 1 studied by SR-PES. Applied Surface Science, 100. 513-517 doi:10.1016/0169-4332(96)00330-3
Watanabe, H., Iwami, M., Hirai, M., Kusaka, M., Nakamura, H., Kawai, M., Soezima, H. (1992) Electronic and atomic structures of metal(Ni, Co, Au) /Si(111) contacts: soft X-ray spectroscopy and photoelectron spectroscopy. Applied Surface Science, 56. 531-534 doi:10.1016/0169-4332(92)90283-4
Kamiura, Y., Hashimoto, F., Iwami, M. (1990) Iron accumulation at the Si-SiO2 interface and possible reduction of SiO2. Applied Surface Science, 41. 447-450 doi:10.1016/0169-4332(89)90101-3
Yamauchi, S., Hirai, M., Kusaka, M., Iwami, M., Nakamura, H., Yokota, Y., Akiyama, A., Watabe, H. (1992) TEM and SXES study of Ni-silicide/Si interface: crystallographic relationship with the Si substrates. Applied Surface Science, 60. 372-379 doi:10.1016/0169-4332(92)90446-5
 
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