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Kamiura, Y., Hashimoto, F., Iwami, M. (1990) Iron accumulation at the Si-SiO2 interface and possible reduction of SiO2. Applied Surface Science, 41. 447-450 doi:10.1016/0169-4332(89)90101-3

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Reference TypeJournal (article/letter/editorial)
TitleIron accumulation at the Si-SiO2 interface and possible reduction of SiO2
JournalApplied Surface Science
AuthorsKamiura, Y.Author
Hashimoto, F.Author
Iwami, M.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90101-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9894971Long-form Identifiermindat:1:5:9894971:9
GUID0
Full ReferenceKamiura, Y., Hashimoto, F., Iwami, M. (1990) Iron accumulation at the Si-SiO2 interface and possible reduction of SiO2. Applied Surface Science, 41. 447-450 doi:10.1016/0169-4332(89)90101-3
Plain TextKamiura, Y., Hashimoto, F., Iwami, M. (1990) Iron accumulation at the Si-SiO2 interface and possible reduction of SiO2. Applied Surface Science, 41. 447-450 doi:10.1016/0169-4332(89)90101-3
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Akatsu, Hiroyuki, Ohdomari, Iwao (1990) HRTEM observation of the Si/SiO2 interface. Applied Surface Science, 41. 357-364 doi:10.1016/0169-4332(89)90085-8
Yokota, Katsuhiro, Ohtsuki, Koichi, Ochi, Masatoshi, Ishihara, Shinji, Kimura, Itsuro (1990) Accumulation of implanted arsenic at the interface during annealing on thermally oxidized Si and SiO2 covered Si. Applied Surface Science, 41. 411-415 doi:10.1016/0169-4332(89)90093-7
Ourmazd, A., Fuoss, P.H., Bevk, J., Morar, J.F. (1990) The Si(001)/SiO2 interface. Applied Surface Science, 41. 365-371 doi:10.1016/0169-4332(89)90086-x
Yasuda, Y., Zaima, S., Kaida, T., Koide, Y. (1990) Formation of Si-SiO2 interfaces at low temperatures using microwave-excited plasma. Applied Surface Science, 41. 429-432 doi:10.1016/0169-4332(89)90097-4
Jusko, O., Marienhoff, P., Henzler, M. (1990) Regular step arrays at the SiO2/Si(111) interface. Applied Surface Science, 40. 295-302 doi:10.1016/0169-4332(90)90027-w
Ye, Qiu-Yi, Koch, F. (1989) Modification of the Siî—¸SiO2 interface by the degradation-annealing cycle. Applied Surface Science, 39. 339-347 doi:10.1016/0169-4332(89)90448-0
Celler, G.K., Trimble, L.E. (1989) Formation of SiO at Si/SiO2 interface and its influence on transport of group V dopants and Ge in SiO2. Applied Surface Science, 39. 245-258 doi:10.1016/0169-4332(89)90439-x
Fujimura, Norifumi, Ito, Taichiro (1990) TiSi2 formation at the Ti-rich TiNx/Si interface. Applied Surface Science, 41. 272-276 doi:10.1016/0169-4332(89)90069-x
Inoue, Kohji, Okuyama, Masanori, Hamakawa, Yoshihiro (1990) Optical and interfacial properties of SiO2 films deposited on Si by photo-CVD. Applied Surface Science, 41. 407-410 doi:10.1016/0169-4332(89)90092-5
Edwards, Arthur H. (1989) A critical assessment of the overcoordination model for the Pb center at the 〈111〉 Si/SiO2 interface. Applied Surface Science, 39. 309-316 doi:10.1016/0169-4332(89)90445-5
Sugita, Y., Watanabe, S., Awaji, N., Komiya, S. (1996) Structural fluctuation of SiO2 network at the interface with Si. Applied Surface Science, 100. 268-271 doi:10.1016/0169-4332(96)00302-9
 
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