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Tsuji, Masaharu, Sakumoto, Minoru, Itoh, Naoki, Obase, Hiroshi, Nishimura, Yukio (1991) SiO2 film growth by ArF laser photolysis of SiH4/N2O mixtures. Applied Surface Science, 51. 171-176 doi:10.1016/0169-4332(91)90399-5

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Reference TypeJournal (article/letter/editorial)
TitleSiO2 film growth by ArF laser photolysis of SiH4/N2O mixtures
JournalApplied Surface Science
AuthorsTsuji, MasaharuAuthor
Sakumoto, MinoruAuthor
Itoh, NaokiAuthor
Obase, HiroshiAuthor
Nishimura, YukioAuthor
Year1991 (September)Volume51
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(91)90399-5Search in ResearchGate
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Mindat Ref. ID9895533Long-form Identifiermindat:1:5:9895533:0
GUID0
Full ReferenceTsuji, Masaharu, Sakumoto, Minoru, Itoh, Naoki, Obase, Hiroshi, Nishimura, Yukio (1991) SiO2 film growth by ArF laser photolysis of SiH4/N2O mixtures. Applied Surface Science, 51. 171-176 doi:10.1016/0169-4332(91)90399-5
Plain TextTsuji, Masaharu, Sakumoto, Minoru, Itoh, Naoki, Obase, Hiroshi, Nishimura, Yukio (1991) SiO2 film growth by ArF laser photolysis of SiH4/N2O mixtures. Applied Surface Science, 51. 171-176 doi:10.1016/0169-4332(91)90399-5
In(n.d.) Applied Surface Science Vol. 51. Elsevier BV

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Tsuji, Masaharu, Itoh, Naoki, Nishimura, Yukio (1991) Deposition of SiO2Films from ArF Laser Photolysis of SiH4/N2O Mixtures. Japanese Journal of Applied Physics, 30. 2868-2872 doi:10.1143/jjap.30.2868
Tsuji, Masaharu, Itoh, Naoki, Sakumoto, Minoru, Nishimura, Yukio (1993) Deposition of SiO2Films from ArF Laser Photolysis of Si2H6/N2O Mixtures in a Parallel Irradiation Configuration. Japanese Journal of Applied Physics, 32. 139-143 doi:10.1143/jjap.32.139
Tsuji, Masaharu, Sakumoto, Minoru, Obase, Hiroshi, Nishimura, Yukio (1990) Direct Oxidation of Silicon Substrates Using ArF Excimer Laser Photolysis of N2O at Low Temperatures. Chemistry Letters, 19 (6). 863-866 doi:10.1246/cl.1990.863
Tsuji, Masaharu, Itoh, Naoki, Nishimura, Yukio (1993) SiO2Film Growth from ArF Laser Photolysis of Si2H6and N2O in a Perpendicular Irradiation Configuration. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l123
Tsuji, Masaharu, Sakumoto, Minoru, Fujii, Yuichi, Obase, Hiroshi, Nishimura, Yukio (1990) Oxidation of Silicon Substrates in the Flowing Afterglow by Using O2, N2O, and H2O. Chemistry Letters, 19 (6). 881-884 doi:10.1246/cl.1990.881
Nishimura, Yukio, Hiroki, Ujita, Ochiai, Terufumi, Tsuji, Masaharu (1994) Tantalum oxide film deposition by laser ablation. Applied Surface Science, 79. 165-170 doi:10.1016/0169-4332(94)90406-5
Nishimura, Yukio, Ujita, Hiroki, Tsuji, Masaharu (1995) Tantalum oxide film formation by excimer laser ablation. Applied Surface Science, 89. 393-399 doi:10.1016/0169-4332(95)00041-0
Nishimura, Yukio, Shinkawa, Akihiro, Ujita, Hiroki, Tsuji, Masaharu, Nakamura, Masafumi (1998) Deposition of tantalum oxide films by ArF excimer laser ablation. Applied Surface Science, 136. 22-28 doi:10.1016/s0169-4332(98)00332-8
Tsuji, Masaharu, Kobarai, Kazunari, Yamaguchi, Sumio, Obase, Hiroshi, Nishimura, Yukio (1990) Dissociative excitation of SiH4 by collisions with krypton active species. Chemical Physics Letters, 166. 485-490 doi:10.1016/0009-2614(90)87138-h
Tsuji, Masaharu, Kobarai, Kazunari, Yamaguchi, Sumio, Obase, Hiroshi, Yamaguchi, Kazuo, Nishimura, Yukio (1989) Dissociative excitation of SiH4 by collisions with metastable argon atoms. Chemical Physics Letters, 155. 481-485 doi:10.1016/0009-2614(89)87190-8
Tsuji, Masaharu, Itoh, Naoki, Nishimura, Yukio (1992) Deposition of SiO2Thin Films by Reactive Excimer Laser Ablation. Japanese Journal of Applied Physics, 31. 2536-2539 doi:10.1143/jjap.31.2536
 
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