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Rautanen, J., Leskelä, M., Niinistö, L., Nykänen, E., Soininen, P., Utriainen, M. (1994) The effect of growth parameters on the deposition of CaS thin films by atomic layer epitaxy. Applied Surface Science, 82. 553-558 doi:10.1016/0169-4332(94)90274-7

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of growth parameters on the deposition of CaS thin films by atomic layer epitaxy
JournalApplied Surface Science
AuthorsRautanen, J.Author
Leskelä, M.Author
Niinistö, L.Author
Nykänen, E.Author
Soininen, P.Author
Utriainen, M.Author
Year1994 (December)Volume82
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(94)90274-7Search in ResearchGate
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Mindat Ref. ID9897424Long-form Identifiermindat:1:5:9897424:7
GUID0
Full ReferenceRautanen, J., Leskelä, M., Niinistö, L., Nykänen, E., Soininen, P., Utriainen, M. (1994) The effect of growth parameters on the deposition of CaS thin films by atomic layer epitaxy. Applied Surface Science, 82. 553-558 doi:10.1016/0169-4332(94)90274-7
Plain TextRautanen, J., Leskelä, M., Niinistö, L., Nykänen, E., Soininen, P., Utriainen, M. (1994) The effect of growth parameters on the deposition of CaS thin films by atomic layer epitaxy. Applied Surface Science, 82. 553-558 doi:10.1016/0169-4332(94)90274-7
In(n.d.) Applied Surface Science Vol. 82. Elsevier BV

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Soininen, P., Niinistö, L., Nykänen, E., Leskelä, M. (1994) The effect of gaseous SiCl4 on the ALE growth of CaS, SrS and SrS:Ce. Applied Surface Science, 75. 99-105 doi:10.1016/0169-4332(94)90143-0
Asikainen, T., Ritala, M., Leskelä, M. (1994) Growth of In2S3 thin films by atomic layer epitaxy. Applied Surface Science, 82. 122-125 doi:10.1016/0169-4332(94)90206-2
Niinistö, Lauri, Leskelä, Markku (1994) Atomic layer epitaxy in the growth of complex thin film structures for electroluminescent applications. Applied Surface Science, 82. 454-459 doi:10.1016/0169-4332(94)90258-5
Hiltunen, L., Kattelus, H., Leskelä, M., Mäkelä, M., Niinistö, L., Nykänen, E., Soininen, P., Tiittad, M. (1991) Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes. Materials Chemistry and Physics, 28. 379-388 doi:10.1016/0254-0584(91)90073-4
Lindroos, Seppo, Kanniainen, Tapio, Leskelä, Markku (1994) Growth of ZnS thin films by liquid-phase atomic layer epitaxy (LPALE). Applied Surface Science, 75. 70-74 doi:10.1016/0169-4332(94)90138-4
Aarik, J., Aidla, A., Jaek, A., Leskelä, M., Niinistö, L. (1994) Precursor properties of calcium β-diketonate in vapor phase atomic layer epitaxy. Applied Surface Science, 75. 33-38 doi:10.1016/0169-4332(94)90132-5
Ozeki, M., Ohtsuka, N. (1994) Atomic layer epitaxy of AlAs: Growth mechanism. Applied Surface Science, 82. 233-238 doi:10.1016/0169-4332(94)90222-4
Elers, Kai-Erik, Ritala, Mikko, Leskelä, Markku, Rauhala, Eero (1994) NbCl5 as a precursor in atomic layer epitaxy. Applied Surface Science, 82. 468-474 doi:10.1016/0169-4332(94)90260-7
Lujala, Vesa, Skarp, Jarmo, Tammenmaa, Markku, Suntola, Tuomo (1994) Atomic layer epitaxy growth of doped zinc oxide thin films from organometals. Applied Surface Science, 82. 34-40 doi:10.1016/0169-4332(94)90192-9
Yoshida, I., Furukawa, H., Hirosawa, T., Nakao, M. (1994) Fabrication of CuO2-plane-based high-temperature superconducting thin films by atomic layer controlled molecular beam epitaxy. Applied Surface Science, 82. 501-506 doi:10.1016/0169-4332(94)90265-8
Leskelä, M., Niinistö, L., Nykänen, E., Soininen, P., Tiitta, M. (1989) Electroluminescent thin films containing terbium-activated strontium sulfide. Journal of the Less Common Metals, 153 (2). 219-222 doi:10.1016/0022-5088(89)90114-8
 
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