Vote for your favorite mineral in #MinCup25! - Taenite vs. Nontronite
It's a mineral found mostly in the farthest reaches of space vs one so common an exhaustive list of localities is nigh impossible as alloy #taenite faces off against clay #nontronite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Wolf, H., Streiter, R., Schulz, S.E., Gessner, T. (1995) Growth rate modeling for selective tungsten LPCVD. Applied Surface Science, 91. 332-338 doi:10.1016/0169-4332(95)00140-9

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleGrowth rate modeling for selective tungsten LPCVD
JournalApplied Surface Science
AuthorsWolf, H.Author
Streiter, R.Author
Schulz, S.E.Author
Gessner, T.Author
Year1995 (October)Volume91
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(95)00140-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9897906Long-form Identifiermindat:1:5:9897906:6
GUID0
Full ReferenceWolf, H., Streiter, R., Schulz, S.E., Gessner, T. (1995) Growth rate modeling for selective tungsten LPCVD. Applied Surface Science, 91. 332-338 doi:10.1016/0169-4332(95)00140-9
Plain TextWolf, H., Streiter, R., Schulz, S.E., Gessner, T. (1995) Growth rate modeling for selective tungsten LPCVD. Applied Surface Science, 91. 332-338 doi:10.1016/0169-4332(95)00140-9
In(n.d.) Applied Surface Science Vol. 91. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Schulz, S.E., Hintze, B., Gessner, T., Wolf, H., Gruenewald, W. (1993) Selective tungsten CVD on sputtered tungsten for via fill. Applied Surface Science, 73. 42-50 doi:10.1016/0169-4332(93)90144-z
Gessner, T., Schultz, S.E. (1995) Preface. Applied Surface Science, 91. doi:10.1016/0169-4332(95)80011-5
Schulz, S.E., Hintze, B., Grünewald, W., Fiedler, O., Gessner, T. (1995) Evaluation of selective tungsten plugs on TiN, W and AlSi by analytical and electrical measurements. Applied Surface Science, 91. 326-331 doi:10.1016/0169-4332(95)00139-5
Gessner, T., Hintze, B., Raschke, T., Schulz, S.E. (1991) Investigation of tungsten CVD on Mo and TiN. Applied Surface Science, 53. 41-46 doi:10.1016/0169-4332(91)90240-k
Gruenewald, W., Schulz, S.E., Hintze, B., Gessner, T. (1993) Interface reactions between CVD and PVD tungsten and aluminium. Applied Surface Science, 73. 290-294 doi:10.1016/0169-4332(93)90182-b
Kähler, J.D., Depta, D., Ferretti, R. (1995) Selective deposition of tungsten on ITM-CoSi2. Applied Surface Science, 91. 339-341 doi:10.1016/0169-4332(95)00141-7
Kuiper, A.E.T., Willemsen, M.F.C., Schmitz, J.E.J. (1989) Chemical effects in cold-wall LPCVD of tungsten. Applied Surface Science, 38. 338-348 doi:10.1016/0169-4332(89)90553-9
(1995) Subject index. Applied Surface Science, 91. 393-407 doi:10.1016/0169-4332(95)91927-9
Röber, J., Kaufmann, C., Gessner, T. (1995) Structure and electrical properties of thin copper films deposited by MOCVD. Applied Surface Science, 91. 134-138 doi:10.1016/0169-4332(95)00108-5
(1995) Sponsors. Applied Surface Science, 91. doi:10.1016/0169-4332(95)91923-6
Kaufmann, C., Baumann, J., Gessner, T., Raschke, T., Rennau, M., Zichner, N. (1995) Electrical characterization of reactively sputtered TiN diffusion barrier layers for copper metallization. Applied Surface Science, 91. 291-294 doi:10.1016/0169-4332(95)00133-6
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 15, 2025 06:15:59
Go to top of page