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Brauer, G., Anwand, W., Nicht, E.-M., Coleman, P.G., Wagner, N., Wirth, H., Skorupa, W. (1997) Experimental determination of positronic and electronic characteristics of 3C-SiC. Applied Surface Science, 116. 19-22 doi:10.1016/s0169-4332(96)00967-1

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Reference TypeJournal (article/letter/editorial)
TitleExperimental determination of positronic and electronic characteristics of 3C-SiC
JournalApplied Surface Science
AuthorsBrauer, G.Author
Anwand, W.Author
Nicht, E.-M.Author
Coleman, P.G.Author
Wagner, N.Author
Wirth, H.Author
Skorupa, W.Author
Year1997 (May)Volume116
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(96)00967-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9899470Long-form Identifiermindat:1:5:9899470:0
GUID0
Full ReferenceBrauer, G., Anwand, W., Nicht, E.-M., Coleman, P.G., Wagner, N., Wirth, H., Skorupa, W. (1997) Experimental determination of positronic and electronic characteristics of 3C-SiC. Applied Surface Science, 116. 19-22 doi:10.1016/s0169-4332(96)00967-1
Plain TextBrauer, G., Anwand, W., Nicht, E.-M., Coleman, P.G., Wagner, N., Wirth, H., Skorupa, W. (1997) Experimental determination of positronic and electronic characteristics of 3C-SiC. Applied Surface Science, 116. 19-22 doi:10.1016/s0169-4332(96)00967-1
In(n.d.) Applied Surface Science Vol. 116. Elsevier BV

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Anwand, W, Brauer, G, Wirth, H, Skorupa, W, Coleman, P.G (2002) The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H–SiC. Applied Surface Science, 194. 127-130 doi:10.1016/s0169-4332(02)00111-3
Anwand, W, Brauer, G, Coleman, P.G, Voelskow, M, Skorupa, W (1999) Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering. Applied Surface Science, 149. 148-150 doi:10.1016/s0169-4332(99)00191-9
Anwand, W, Brauer, G, Coleman, P.G, Yankov, R, Skorupa, W (1999) Characterization of vacancy-type defects in Al+ and N+ co-implanted SiC by slow positron implantation spectroscopy. Applied Surface Science, 149. 140-143 doi:10.1016/s0169-4332(99)00189-0
Kuriplach, J., Anwand, W., Brauer, G., Skorupa, W. (2002) Positron characteristics of various SiO2 polymorphs. Applied Surface Science, 194. 84-88 doi:10.1016/s0169-4332(02)00093-4
Anwand, W, Brauer, G, Skorupa, W (2002) Vacancy-type defects in 6H–SiC caused by N+ and Al+ high fluence co-implantation. Applied Surface Science, 194. 131-135 doi:10.1016/s0169-4332(02)00112-5
Anwand, W., Brauer, G., Skorupa, W. (2001) Evolution of ion implantation-caused vacancy-type defects in 6H–SiC probed by slow positron implantation spectroscopy. Applied Surface Science, 184. 247-251 doi:10.1016/s0169-4332(01)00496-2
Brauer, G., Anwand, W., Nicht, E.-M., Kuriplach, J., Å ob, M., Wagner, N., Coleman, P. G., Puska, M. J., Korhonen, T. (1996) Evaluation of some basic positron-related characteristics of SiC. Physical Review B, 54 (4) 2512-2517 doi:10.1103/physrevb.54.2512
Overton, N., Coleman, P.G. (1997) Determination of the Sickafus index by positron-stimulated secondary electron emission. Applied Surface Science, 116. 134-139 doi:10.1016/s0169-4332(96)01042-2
Brauer, G., Anwand, W., Eichhorn, F., Skorupa, W., Hofer, C., Teichert, C., Kuriplach, J., Cizek, J., Prochazka, I., Coleman, P.G., Nozawa, T., Kohyama, A. (2006) Characterization of a SiC/SiC composite by X-ray diffraction, atomic force microscopy and positron spectroscopies. Applied Surface Science, 252. 3342-3351 doi:10.1016/j.apsusc.2005.08.096
Kuriplach, J., Å ob, M., Brauer, G., Anwand, W., Nicht, E.-M., Coleman, P. G., Wagner, N. (1999) Positron affinity in semiconductors: Theoretical and experimental studies. Physical Review B, 59 (3) 1948-1955 doi:10.1103/physrevb.59.1948
Jirásková, Y, Brauer, G, Schneeweiss, O, Blawert, C, Anwand, W, Coleman, P.G (2002) The migration of defects and nitrogen atoms in nitrided surface layers of austenitic stainless steel followed by microscopic methods. Applied Surface Science, 194. 145-149 doi:10.1016/s0169-4332(02)00115-0
 
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