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Anwand, W, Brauer, G, Coleman, P.G, Voelskow, M, Skorupa, W (1999) Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering. Applied Surface Science, 149. 148-150 doi:10.1016/s0169-4332(99)00191-9

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Reference TypeJournal (article/letter/editorial)
TitleCharacterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
JournalApplied Surface Science
AuthorsAnwand, WAuthor
Brauer, GAuthor
Coleman, P.GAuthor
Voelskow, MAuthor
Skorupa, WAuthor
Year1999 (August)Volume149
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00191-9Search in ResearchGate
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Mindat Ref. ID9901435Long-form Identifiermindat:1:5:9901435:7
GUID0
Full ReferenceAnwand, W, Brauer, G, Coleman, P.G, Voelskow, M, Skorupa, W (1999) Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering. Applied Surface Science, 149. 148-150 doi:10.1016/s0169-4332(99)00191-9
Plain TextAnwand, W, Brauer, G, Coleman, P.G, Voelskow, M, Skorupa, W (1999) Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering. Applied Surface Science, 149. 148-150 doi:10.1016/s0169-4332(99)00191-9
In(n.d.) Applied Surface Science Vol. 149. Elsevier BV

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Anwand, W, Brauer, G, Coleman, P.G, Yankov, R, Skorupa, W (1999) Characterization of vacancy-type defects in Al+ and N+ co-implanted SiC by slow positron implantation spectroscopy. Applied Surface Science, 149. 140-143 doi:10.1016/s0169-4332(99)00189-0
Anwand, W., Brauer, G., Skorupa, W. (2001) Evolution of ion implantation-caused vacancy-type defects in 6H–SiC probed by slow positron implantation spectroscopy. Applied Surface Science, 184. 247-251 doi:10.1016/s0169-4332(01)00496-2
Anwand, W, Brauer, G, Wirth, H, Skorupa, W, Coleman, P.G (2002) The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H–SiC. Applied Surface Science, 194. 127-130 doi:10.1016/s0169-4332(02)00111-3
Anwand, W, Brauer, G, Skorupa, W (2002) Vacancy-type defects in 6H–SiC caused by N+ and Al+ high fluence co-implantation. Applied Surface Science, 194. 131-135 doi:10.1016/s0169-4332(02)00112-5
Coleman, P.G, Knights, A.P (1999) Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si. Applied Surface Science, 149. 82-86 doi:10.1016/s0169-4332(99)00177-4
Sendezera, E.J., Davidson, A.T., Fischer, C.G., Connel, S.H., Sellschop, J.P.F., Anwand, W., Brauer, G., Nicht, E.M. (1999) Characterisation of Al+-implanted LiF by a monoenergetic positron beam. Applied Surface Science, 149. 125-129 doi:10.1016/s0169-4332(99)00186-5
Brauer, G., Anwand, W., Nicht, E.-M., Coleman, P.G., Wagner, N., Wirth, H., Skorupa, W. (1997) Experimental determination of positronic and electronic characteristics of 3C-SiC. Applied Surface Science, 116. 19-22 doi:10.1016/s0169-4332(96)00967-1
Burrows, C.P, Knights, A.P, Coleman, P.G (1999) Near-surface lateral vacancy migration in O+-implanted SiC studied by positron re-emission microscopy. Applied Surface Science, 149. 135-139 doi:10.1016/s0169-4332(99)00188-9
Anwand, W., Skorupa, W., Schumann, Th., Posselt, M., Schmidt, B., Grötzschel, R., Brauer, G. (2008) Implantation-caused open volume defects in Ge after flash lamp annealing (FLA) probed by slow positron implantation spectroscopy (SPIS). Applied Surface Science, 255. 81-83 doi:10.1016/j.apsusc.2008.05.165
Kuriplach, J., Anwand, W., Brauer, G., Skorupa, W. (2002) Positron characteristics of various SiO2 polymorphs. Applied Surface Science, 194. 84-88 doi:10.1016/s0169-4332(02)00093-4
Revesz, A.G, Anwand, W, Brauer, G, Hughes, H.L, Skorupa, W (2002) Density gradient in SiO2 films on silicon as revealed by positron annihilation spectroscopy. Applied Surface Science, 194. 101-105 doi:10.1016/s0169-4332(02)00096-x
 
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