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Coleman, P.G, Knights, A.P (1999) Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si. Applied Surface Science, 149. 82-86 doi:10.1016/s0169-4332(99)00177-4

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement of depth sensitivity in slow positron implantation spectroscopy of Si
JournalApplied Surface Science
AuthorsColeman, P.GAuthor
Knights, A.PAuthor
Year1999 (August)Volume149
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00177-4Search in ResearchGate
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Mindat Ref. ID9901422Long-form Identifiermindat:1:5:9901422:3
GUID0
Full ReferenceColeman, P.G, Knights, A.P (1999) Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si. Applied Surface Science, 149. 82-86 doi:10.1016/s0169-4332(99)00177-4
Plain TextColeman, P.G, Knights, A.P (1999) Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si. Applied Surface Science, 149. 82-86 doi:10.1016/s0169-4332(99)00177-4
In(n.d.) Applied Surface Science Vol. 149. Elsevier BV

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Burrows, C.P, Knights, A.P, Coleman, P.G (1999) Near-surface lateral vacancy migration in O+-implanted SiC studied by positron re-emission microscopy. Applied Surface Science, 149. 135-139 doi:10.1016/s0169-4332(99)00188-9
Anwand, W, Brauer, G, Coleman, P.G, Voelskow, M, Skorupa, W (1999) Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering. Applied Surface Science, 149. 148-150 doi:10.1016/s0169-4332(99)00191-9
Anwand, W, Brauer, G, Coleman, P.G, Yankov, R, Skorupa, W (1999) Characterization of vacancy-type defects in Al+ and N+ co-implanted SiC by slow positron implantation spectroscopy. Applied Surface Science, 149. 140-143 doi:10.1016/s0169-4332(99)00189-0
Taylor, J.W., Saleh, A.S., Rice-Evans, P.C., Knights, A.P., Jeynes, C. (1999) Depth profiling of defects in nitrogen implanted silicon using a slow positron beam. Applied Surface Science, 149. 175-180 doi:10.1016/s0169-4332(99)00196-8
Fischer, C.G, Connell, S.H, Coleman, P.G, Malik, F, Britton, D.T, Sellschop, J.P.F (1999) A slow positron beam study of natural and synthetic diamonds. Applied Surface Science, 149. 221-226 doi:10.1016/s0169-4332(99)00205-6
Coleman, P.G, Malik, F, Uren, M.J, Brunson, K.M, Sands, D, Walton, C.D (1999) Positron annihilation spectroscopy of laser-irradiated 4H-SiC. Applied Surface Science, 149. 144-147 doi:10.1016/s0169-4332(99)00190-7
Coleman, P.G (2002) Surface physics with slow positron beams. Applied Surface Science, 194. 264-270 doi:10.1016/s0169-4332(02)00132-0
Overton, N., Knights, A.P., Goodyear, A., Coleman, P.G. (1995) Work function and epithermal positron emission from copper. Applied Surface Science, 85. 54-58 doi:10.1016/0169-4332(94)00308-4
Knights, A.P., Coleman, P.G. (1995) Secondary electron emission from Ag(100) stimulated by positron and electron impact. Applied Surface Science, 85. 43-48 doi:10.1016/0169-4332(94)00306-8
White, Marion M, Lessner, Eliane S (1999) A low-neutron background slow-positron source. Applied Surface Science, 149. 20-23 doi:10.1016/s0169-4332(99)00165-8
Hirose, Masafumi, Nakajyo, Terunobu (1999) The SHI slow positron beam facility with a compact cyclotron. Applied Surface Science, 149. 24-29 doi:10.1016/s0169-4332(99)00166-x
 
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