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Park, Hyung-Sang, Min, Jae-Sik, Lim, Jung-Wook, Kang, Sang-Won (2000) Theoretical evaluation of film growth rate during atomic layer epitaxy. Applied Surface Science, 158. 81-91 doi:10.1016/s0169-4332(99)00580-2

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Reference TypeJournal (article/letter/editorial)
TitleTheoretical evaluation of film growth rate during atomic layer epitaxy
JournalApplied Surface Science
AuthorsPark, Hyung-SangAuthor
Min, Jae-SikAuthor
Lim, Jung-WookAuthor
Kang, Sang-WonAuthor
Year2000 (May)Volume158
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00580-2Search in ResearchGate
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Mindat Ref. ID9901832Long-form Identifiermindat:1:5:9901832:6
GUID0
Full ReferencePark, Hyung-Sang, Min, Jae-Sik, Lim, Jung-Wook, Kang, Sang-Won (2000) Theoretical evaluation of film growth rate during atomic layer epitaxy. Applied Surface Science, 158. 81-91 doi:10.1016/s0169-4332(99)00580-2
Plain TextPark, Hyung-Sang, Min, Jae-Sik, Lim, Jung-Wook, Kang, Sang-Won (2000) Theoretical evaluation of film growth rate during atomic layer epitaxy. Applied Surface Science, 158. 81-91 doi:10.1016/s0169-4332(99)00580-2
In(n.d.) Applied Surface Science Vol. 158. Elsevier BV

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Lim, Jung-Wook, Park, Hyung-Sang, Kang, Sang-Won (2001) Kinetic Modeling of Film Growth Rate in Atomic Layer Deposition. Journal of the Electrochemical Society, 148. doi:10.1149/1.1368102
Lim, Jung-Wook, Park, Hyung-Sang, Kang, Sang-Won (2000) Analysis of a transient region during the initial stage of atomic layer deposition. Journal of Applied Physics, 88 (11). 6327-6331 doi:10.1063/1.1321775
Min, Jae-Sik, Park, Hyung-Sang, Kang, Sang-Won (1999) Metal–organic atomic-layer deposition of titanium–silicon–nitride films. Applied Physics Letters, 75 (11). 1521-1523 doi:10.1063/1.124742
Lim, Jung-Wook, Park, Jin-Seong, Kang, Sang-Won (2000) Kinetic modeling of film growth rates of TiN films in atomic layer deposition. Journal of Applied Physics, 87 (9). 4632-4634 doi:10.1063/1.373116
Min, Jae-Sik, Park, Jin-Seong, Park, Hyung-Sang, Kanga, Sang-Won (2000) The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films. Journal of the Electrochemical Society, 147. 3868pp. doi:10.1149/1.1393988
Shim, Kyung-Suk, Kim, Sung-Min, Bae, Sang Hyuck, Lee, Sang Yeol, Jung, Hae-suk, Park, Hyung-ho (2000) Fabrication and characterization of diamond-like carbon thin films by pulsed laser deposition. Applied Surface Science, 154. 482-484 doi:10.1016/s0169-4332(99)00401-8
Park, Sung-Woo, Jung, Sang-Bae, Kang, Min-Gu, Park, Hyung-Ho, Kim, Hae-Cheon (2003) Modification of GaAs and copper surface by the formation of SiO2 aerogel film as an interlayer dielectric. Applied Surface Science, 216. 98-105 doi:10.1016/s0169-4332(03)00488-4
Chang, Sung-Sik, Yoon, Sang Ok, Park, Hye Jeong, Sakai, Akira (2000) Luminescence properties of anodically etched porous Zn. Applied Surface Science, 158. 330-334 doi:10.1016/s0169-4332(00)00039-8
Utriainen, Mikko, Kröger-Laukkanen, Minna, Johansson, Leena-Sisko, Niinistö, Lauri (2000) Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac)2 (M=Ni, Cu, Pt) precursors. Applied Surface Science, 157. 151-158 doi:10.1016/s0169-4332(99)00562-0
Lee, Sang-Do, Nam, So-Young, Ha, Jae-Hee, Park, Jin-Won (2000) Analysis of the sidewall films formed during Si trench etching with photoresist mask in Cl2/HBr-based plasma. Applied Surface Science, 165. 1-8 doi:10.1016/s0169-4332(99)00595-4
Lee, Sang Il, Lim, Hyeong-Gyu, Kwon, Sun Sang, Kim, Su Han, Lee, Jae Hyung, Park, Jeong-Min, Jang, Jae-il, Yang, Sung Ik, Park, Won Il (2020) Wallpapering-inspired spreading and wrinkling of atomically-thin materials. Applied Surface Science, 507. 145184pp. doi:10.1016/j.apsusc.2019.145184
 
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