Vote for your favorite mineral in #MinCup25! - Carpathite vs. Tugtupite
Battle of mineralogical oddities as organic mineral #carpathite battles against vs #tugtupite, a mineral that looks like reindeer blood!
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Senzaki, J, Fukuda, K, Imai, S, Tanaka, Y, Kobayashi, N, Tanoue, H, Okushi, H, Arai, K (2000) The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature. Applied Surface Science, 159. 544-549 doi:10.1016/s0169-4332(00)00093-3

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleThe post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature
JournalApplied Surface Science
AuthorsSenzaki, JAuthor
Fukuda, KAuthor
Imai, SAuthor
Tanaka, YAuthor
Kobayashi, NAuthor
Tanoue, HAuthor
Okushi, HAuthor
Arai, KAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00093-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9901933Long-form Identifiermindat:1:5:9901933:4
GUID0
Full ReferenceSenzaki, J, Fukuda, K, Imai, S, Tanaka, Y, Kobayashi, N, Tanoue, H, Okushi, H, Arai, K (2000) The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature. Applied Surface Science, 159. 544-549 doi:10.1016/s0169-4332(00)00093-3
Plain TextSenzaki, J, Fukuda, K, Imai, S, Tanaka, Y, Kobayashi, N, Tanoue, H, Okushi, H, Arai, K (2000) The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature. Applied Surface Science, 159. 544-549 doi:10.1016/s0169-4332(00)00093-3
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Senzaki, Junji, Fukuda, Kenji, Imai, Seiji, Tanaka, Yasunori, Kobayashi, Naoto, Tanoue, Hisao, Okushi, Hideyo, Arai, Kazuo (2000) Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature. Materials Science Forum, 338. 865-868 doi:10.4028/www.scientific.net/msf.338-342.865
Kosugi, R, Ichimura, S, Kurokawa, A, Koike, K, Fukuda, K, Suzuki, S, Okushi, H, Yoshida, S, Arai, K (2000) Effects of ozone treatment of 4H–SiC(0001) surface. Applied Surface Science, 159. 550-555 doi:10.1016/s0169-4332(00)00092-1
Sawada, T, Ito, Y, Imai, K, Suzuki, K, Tomozawa, H, Sakai, S (2000) Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing. Applied Surface Science, 159. 449-455 doi:10.1016/s0169-4332(00)00060-x
Imai, Seiji, Kobayashi, Setsuko, Shinohe, Takashi, Fukuda, Kenji, Tanaka, Yasunori, Senzaki, Junji, Tanoue, Hisao, Kobayashi, Naoto, Okushi, Hideyo (2000) Hot-Implantation of Phosphorus Ions into 4H-SiC. Materials Science Forum, 338. 861-864 doi:10.4028/www.scientific.net/msf.338-342.861
Yamanaka, S, Takeuchi, D, Watanabe, H, Okushi, H, Kajimura, K (2000) Electrical conduction of high-conductivity layers near the surfaces in hydrogenated homoepitaxial diamond films. Applied Surface Science, 159. 567-571 doi:10.1016/s0169-4332(00)00104-5
Fukuda, K., Cho, W. J., Arai, K., Suzuki, S., Senzaki, J., Tanaka, T. (2000) Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face. Applied Physics Letters, 77 (6). 866-868 doi:10.1063/1.1306649
Senzaki, Junji, Harada, Shinsuke, Kosugi, Ryouji, Suzuki, Seiji, Fukuda, Kenji, Arai, Kazuo (2002) Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing. Materials Science Forum, 389. 795-798 doi:10.4028/www.scientific.net/msf.389-393.795
Fukuda, K., Suzuki, S., Tanaka, T., Arai, K. (2000) Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing. Applied Physics Letters, 76 (12). 1585-1587 doi:10.1063/1.126103
Tanaka, Yasunori, Tanoue, Hisao, Arai, Kazuo (2002) Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing. Materials Science Forum, 389. 799-802 doi:10.4028/www.scientific.net/msf.389-393.799
Tanaka, Yasunori, Tanoue, Hisao, Arai, Kazuo (2003) Electrical activation of the ion-implanted phosphorus in 4H-SiC by excimer laser annealing. Journal of Applied Physics, 93 (10). 5934-5936 doi:10.1063/1.1565190
Caudron, E, Buscail, H (2000) Comparison of the oxidation resistances of yttrium implanted low manganese and low manganese–carbon steels at high temperature. Applied Surface Science, 158. 310-329 doi:10.1016/s0169-4332(00)00011-8
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 20, 2025 06:05:08
Go to top of page