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Akiyama, Toru, Kageshima, Hiroyuki (2003) Microscopic mechanism of interfacial reaction during Si oxidation. Applied Surface Science, 216. 270-274 doi:10.1016/s0169-4332(03)00381-7

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Reference TypeJournal (article/letter/editorial)
TitleMicroscopic mechanism of interfacial reaction during Si oxidation
JournalApplied Surface Science
AuthorsAkiyama, ToruAuthor
Kageshima, HiroyukiAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00381-7Search in ResearchGate
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Mindat Ref. ID9905257Long-form Identifiermindat:1:5:9905257:9
GUID0
Full ReferenceAkiyama, Toru, Kageshima, Hiroyuki (2003) Microscopic mechanism of interfacial reaction during Si oxidation. Applied Surface Science, 216. 270-274 doi:10.1016/s0169-4332(03)00381-7
Plain TextAkiyama, Toru, Kageshima, Hiroyuki (2003) Microscopic mechanism of interfacial reaction during Si oxidation. Applied Surface Science, 216. 270-274 doi:10.1016/s0169-4332(03)00381-7
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Akiyama, Toru, Kageshima, Hiroyuki (2005) Reaction mechanisms of oxygen at SiO2/Si(100) interface. Surface Science, 576 (1). doi:10.1016/j.susc.2005.01.001
Ito, Tomonori, Nakamura, Kohji, Kangawa, Yoshihiro, Shiraishi, Kenji, Taguchi, Akihito, Kageshima, Hiroyuki (2003) Systematic theoretical investigations of miscibility in Si1−x−yGexCy thin films. Applied Surface Science, 216. 458-462 doi:10.1016/s0169-4332(03)00398-2
Akiyama, Toru, Kageshima, Hiroyuki, Uematsu, Masashi, Ito, Tomonori (2008) Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation. Japanese Journal of Applied Physics, 47 (9) 7089-7093 doi:10.1143/jjap.47.7089
Akiyama, Toru, Ito, Tomonori, Kageshima, Hiroyuki, Uematsu, Masashi (2008) Impact of oxidation-induced strain on microscopic processes related to oxidation reaction at theSiO2∕Si(100)interface. Physical Review B, 77 (11) doi:10.1103/physrevb.77.115356
Kageshima, Hiroyuki, Uematsu, Masahi, Akagi, Kazuto, Tsuneyuki, Shinji, Akiyama, Toru, Shiraishi, Kenji (2006) Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation. Japanese Journal of Applied Physics, 45 (2) 694-699 doi:10.1143/jjap.45.694
Chang, Chun-Yen, Trappey, Charles V. (2003) The National Si-Soft Project. Applied Surface Science, 216. 2-7 doi:10.1016/s0169-4332(03)00477-x
(2003) Editorial Board. Applied Surface Science, 216. doi:10.1016/s0169-4332(03)00776-1
(2003) Author Index. Applied Surface Science, 216. doi:10.1016/s0169-4332(03)00784-0
(2003) Subject Index. Applied Surface Science, 216. doi:10.1016/s0169-4332(03)00785-2
Hiraki, Akio (2003) Preface. Applied Surface Science, 216. 1pp. doi:10.1016/s0169-4332(03)00472-0
Takakuwa, Yuji, Ishida, Fumiaki, Kawawa, Takuo (2003) Phase transition from Langmuir-type adsorption to two-dimensional oxide island growth during oxidation on Si(0 0 1) surface. Applied Surface Science, 216. 133-140 doi:10.1016/s0169-4332(03)00501-4
 
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