Nishizaki, K., Nohira, H., Takahashi, K., Kamakura, N., Takata, Y., Shin, S., Kobayashi, K., Tamura, N., Hikazutani, K., Hattori, T. (2003) Depth profiling of oxynitride film formed on Si(1 0 0) by photon energy dependent photoelectron spectroscopy. Applied Surface Science, 216. 287-290 doi:10.1016/s0169-4332(03)00389-1

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Reference Type	Journal (article/letter/editorial)
Title	Depth profiling of oxynitride film formed on Si(1 0 0) by photon energy dependent photoelectron spectroscopy
Journal	Applied Surface Science
Authors	Nishizaki, K.		Author
	Nohira, H.		Author
	Takahashi, K.		Author
	Kamakura, N.		Author
	Takata, Y.		Author
	Shin, S.		Author
	Kobayashi, K.		Author
	Tamura, N.		Author
	Hikazutani, K.		Author
	Hattori, T.		Author
Year	2003 (June)	Volume	216
Publisher	Elsevier BV
DOI	doi:10.1016/s0169-4332(03)00389-1Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	9905265	Long-form Identifier	mindat:1:5:9905265:8
GUID	0
Full Reference	Nishizaki, K., Nohira, H., Takahashi, K., Kamakura, N., Takata, Y., Shin, S., Kobayashi, K., Tamura, N., Hikazutani, K., Hattori, T. (2003) Depth profiling of oxynitride film formed on Si(1 0 0) by photon energy dependent photoelectron spectroscopy. Applied Surface Science, 216. 287-290 doi:10.1016/s0169-4332(03)00389-1
Plain Text	Nishizaki, K., Nohira, H., Takahashi, K., Kamakura, N., Takata, Y., Shin, S., Kobayashi, K., Tamura, N., Hikazutani, K., Hattori, T. (2003) Depth profiling of oxynitride film formed on Si(1 0 0) by photon energy dependent photoelectron spectroscopy. Applied Surface Science, 216. 287-290 doi:10.1016/s0169-4332(03)00389-1
In	(n.d.) Applied Surface Science Vol. 216. Elsevier BV

	Kato, H, Nishizaki, K, Takahashi, K, Nohira, H, Tamura, N, Hikazutani, K, Sano, S, Hattori, T (2002) Compositional depth profiling of ultrathin oxynitride/Si interface using XPS. Applied Surface Science, 190. 39-42 doi:10.1016/s0169-4332(01)00885-6
	Hattori, T, Takahashi, K, Seman, M.B, Nohira, H, Hirose, K, Kamakura, N, Takata, Y, Shin, S, Kobayashi, K (2003) Chemical and electronic structure of SiO2/Si interfacial transition layer. Applied Surface Science, 212. 547-555 doi:10.1016/s0169-4332(03)00054-0
	Shioji, M., Shiraishi, T., Takahashi, K., Nohira, H., Azuma, K., Nakata, Y., Takata, Y., Shin, S., Kobayashi, K., Hattori, T. (2004) X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300 °C. Applied Physics Letters, 84 (19). 3756-3758 doi:10.1063/1.1737793
	Hirose, K, Kitahara, H, Hattori, T (2003) Characterization of dielectric properties of ultrathin SiO2 film formed on Si substrate. Applied Surface Science, 216. 351-355 doi:10.1016/s0169-4332(03)00426-4
	Nohira, H., Shiraishi, T., Nakamura, T., Takahashi, K., Takeda, M., Ohmi, S., Iwai, H., Hattori, T. (2003) Chemical and electronic structures of Lu2O3/Si interfacial transition layer. Applied Surface Science, 216. 234-238 doi:10.1016/s0169-4332(03)00425-2
	Hattori, T, Azuma, K, Nakata, Y, Shioji, M, Shiraishi, T, Yoshida, T, Takahashi, K, Nohira, H, Takata, Y, Shin, S, Kobayashi, K (2004) Dependence of SiO2/Si interface structure on low-temperature oxidation process. Applied Surface Science, 234. 197-201 doi:10.1016/j.apsusc.2004.05.044
	Aoyama, T., Akimoto, K., Ichimiya, A., Hisada, Y., Mukainakano, S., Emoto, T., Tajiri, H., Takahashi, T., Sugiyama, H., Zhang, X., Kawata, H. (2003) Structural study of SiC(0 0 0 1)3×3 surface by surface X-ray diffraction. Applied Surface Science, 216. 356-360 doi:10.1016/s0169-4332(03)00431-8
	Mori, M., Akae, N., Uotani, K., Fujimoto, N., Tambo, T., Tatsuyama, C. (2003) Heteroepitaxial growth of InSb films on a Si(0 0 1) substrate via AlSb buffer layer. Applied Surface Science, 216. 569-574 doi:10.1016/s0169-4332(03)00516-6
	*Hattori, T, Hirose, K, Nohira, H, Takahashi, K, Yagi, T (1999) Elastic scattering of Si 2p photoelectrons in silicon oxide. Applied Surface Science, 144. 297-300 doi:10.1016/s0169-4332(98)00813-7*
	*Nohira, H, Hirose, K, Takahashi, K, Hattori, T (2000) Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides. Applied Surface Science, 162. 304-308 doi:10.1016/s0169-4332(00)00208-7*
	Kobayashi, K., Yabashi, M., Takata, Y., Tokushima, T., Shin, S., Tamasaku, K., Miwa, D., Ishikawa, T., Nohira, H., Hattori, T., Sugita, Y., Nakatsuka, O., Sakai, A., Zaima, S. (2003) High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems. Applied Physics Letters, 83 (5). 1005-1007 doi:10.1063/1.1595714

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