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Ohashi, Tetsuya, Sato, Michihiro, Maruizumi, Takuya, Kitagawa, Isao (2003) Simulation of dislocation accumulation in ULSI cells with STI structure. Applied Surface Science, 216. 340-346 doi:10.1016/s0169-4332(03)00421-5

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Reference TypeJournal (article/letter/editorial)
TitleSimulation of dislocation accumulation in ULSI cells with STI structure
JournalApplied Surface Science
AuthorsOhashi, TetsuyaAuthor
Sato, MichihiroAuthor
Maruizumi, TakuyaAuthor
Kitagawa, IsaoAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00421-5Search in ResearchGate
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Mindat Ref. ID9905277Long-form Identifiermindat:1:5:9905277:3
GUID0
Full ReferenceOhashi, Tetsuya, Sato, Michihiro, Maruizumi, Takuya, Kitagawa, Isao (2003) Simulation of dislocation accumulation in ULSI cells with STI structure. Applied Surface Science, 216. 340-346 doi:10.1016/s0169-4332(03)00421-5
Plain TextOhashi, Tetsuya, Sato, Michihiro, Maruizumi, Takuya, Kitagawa, Isao (2003) Simulation of dislocation accumulation in ULSI cells with STI structure. Applied Surface Science, 216. 340-346 doi:10.1016/s0169-4332(03)00421-5
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Sato, Michihiro, Ohashi, Tetsuya, Aikawa, Keisuke, Maruizumi, Takuya, Kitagawa, Isao (2010) Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length. Materials Science Forum, 654. 1682-1685 doi:10.4028/www.scientific.net/msf.654-656.1682
Sato, Michihiro, Ohashi, Tetsuya, Maruizumi, Takuya, Kitagawa, Isao (2007) Crystal Plasticity Analysis of Dislocation Accumulation in ULSI Cells with Consideration of Temperature Dependence of the Lattice Friction Stress for Silicon. Key Engineering Materials, 340. 199-204 doi:10.4028/www.scientific.net/kem.340-341.199
Sato, Michihiro, Ohashi, Tetsuya, Maruizumi, Takuya, Kitagawa, Isao (2006) Crystal Plasticity Analysis of Thermal Deformation and Dislocation Accumulation in ULSI Cells. Key Engineering Materials, 324. 1035-1038 doi:10.4028/www.scientific.net/kem.324-325.1035
Kitagawa, Isao, Maruizumi, Takuya (2003) New intrinsic pair defects in silicon dioxide interface. Applied Surface Science, 216. 264-269 doi:10.1016/s0169-4332(03)00379-9
Ushio, Jiro, Watanabe, Kikuo, Kushida-Abdelghafar, Keiko, Maruizumi, Takuya (2003) The role of hydrogen migration in negative-bias temperature instability. Applied Surface Science, 216. 258-263 doi:10.1016/s0169-4332(03)00378-7
(2003) Editorial Board. Applied Surface Science, 216. doi:10.1016/s0169-4332(03)00776-1
(2003) Author Index. Applied Surface Science, 216. doi:10.1016/s0169-4332(03)00784-0
(2003) Subject Index. Applied Surface Science, 216. doi:10.1016/s0169-4332(03)00785-2
Hiraki, Akio (2003) Preface. Applied Surface Science, 216. 1pp. doi:10.1016/s0169-4332(03)00472-0
Yun, Hee-Joong (2003) Numerical simulation of vertical temperature distribution in heterogeneous multilayer structure with Mathematica. Applied Surface Science, 214. 312-318 doi:10.1016/s0169-4332(03)00528-2
(2003) Publisher's Note. Applied Surface Science, 206. doi:10.1016/s0169-4332(03)00003-5
 
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