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Ohshima, C., Taguchi, J., Kashiwagi, I., Yamamoto, H., Ohmi, S., Iwai, H. (2003) Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics. Applied Surface Science, 216. 302-306 doi:10.1016/s0169-4332(03)00439-2

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Reference TypeJournal (article/letter/editorial)
TitleEffect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics
JournalApplied Surface Science
AuthorsOhshima, C.Author
Taguchi, J.Author
Kashiwagi, I.Author
Yamamoto, H.Author
Ohmi, S.Author
Iwai, H.Author
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00439-2Search in ResearchGate
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Mindat Ref. ID9905295Long-form Identifiermindat:1:5:9905295:9
GUID0
Full ReferenceOhshima, C., Taguchi, J., Kashiwagi, I., Yamamoto, H., Ohmi, S., Iwai, H. (2003) Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics. Applied Surface Science, 216. 302-306 doi:10.1016/s0169-4332(03)00439-2
Plain TextOhshima, C., Taguchi, J., Kashiwagi, I., Yamamoto, H., Ohmi, S., Iwai, H. (2003) Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics. Applied Surface Science, 216. 302-306 doi:10.1016/s0169-4332(03)00439-2
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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