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Ito, S., Fujioka, H., Ohta, J., Sasaki, A., Liu, J., Yoshimoto, M., Koinuma, H., Oshima, M. (2003) Low-temperature growth of AlN on nearly lattice-matched MnO substrates. Applied Surface Science, 216. 508-511 doi:10.1016/s0169-4332(03)00468-9

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Reference TypeJournal (article/letter/editorial)
TitleLow-temperature growth of AlN on nearly lattice-matched MnO substrates
JournalApplied Surface Science
AuthorsIto, S.Author
Fujioka, H.Author
Ohta, J.Author
Sasaki, A.Author
Liu, J.Author
Yoshimoto, M.Author
Koinuma, H.Author
Oshima, M.Author
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00468-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9905319Long-form Identifiermindat:1:5:9905319:8
GUID0
Full ReferenceIto, S., Fujioka, H., Ohta, J., Sasaki, A., Liu, J., Yoshimoto, M., Koinuma, H., Oshima, M. (2003) Low-temperature growth of AlN on nearly lattice-matched MnO substrates. Applied Surface Science, 216. 508-511 doi:10.1016/s0169-4332(03)00468-9
Plain TextIto, S., Fujioka, H., Ohta, J., Sasaki, A., Liu, J., Yoshimoto, M., Koinuma, H., Oshima, M. (2003) Low-temperature growth of AlN on nearly lattice-matched MnO substrates. Applied Surface Science, 216. 508-511 doi:10.1016/s0169-4332(03)00468-9
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Ito, S, Ohta, J, Fujioka, H, Oshima, M (2002) Growth of GaN on nearly lattice matched MnO substrates by pulsed laser deposition. Applied Surface Science, 197. 384-386 doi:10.1016/s0169-4332(02)00345-8
Ohta, J, Fujioka, H, Takahashi, H, Oshima, M (2002) Growth of epitaxial AlN films on (Mn,Zn)Fe2O4 substrates by pulsed laser deposition. Applied Surface Science, 197. 486-489 doi:10.1016/s0169-4332(02)00376-8
Ohta, J., Fujioka, H., Ito, S., Oshima, M. (2002) Room-temperature epitaxial growth of AlN films. Applied Physics Letters, 81 (13). 2373-2375 doi:10.1063/1.1509863
Ohta, J., Fujioka, H., Takahashi, H., Oshima, M. (2002) Characterization of hetero-interfaces between group III nitrides formed by PLD and various substrates. Applied Surface Science, 190. 352-355 doi:10.1016/s0169-4332(01)00847-9
Ohta, J., Fujioka, H., Furusawa, M., Sasaki, A., Yoshimoto, M., Koinuma, H., Sumiya, M., Oshima, M. (2002) CAICISS characterization of GaN films grown by pulsed laser deposition. Journal of Crystal Growth, 237. 1153-1157 doi:10.1016/s0022-0248(01)02074-7
Ohta, J., Fujioka, H., Oshima, M. (2003) Room-temperature epitaxial growth of GaN on conductive substrates. Applied Physics Letters, 83 (15). 3060-3062 doi:10.1063/1.1617376
Ohta, J, Fujioka, H, Sumiya, M, Koinuma, H, Oshima, M (2001) Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by laser MBE. Journal of Crystal Growth, 225 (1). 73-78 doi:10.1016/s0022-0248(01)01014-4
Sakata, O, Yi, Min-Su, Matsuda, A, Liu, J, Sato, S, Akiba, S, Sasaki, A, Yoshimoto, M (2004) Structural analysis of NiO ultra-thin films epitaxially grown on ultra-smooth sapphire substrates by synchrotron X-ray diffraction measurements. Applied Surface Science, 221. 450-454 doi:10.1016/s0169-4332(03)00961-9
Kawaguchi, Y., Ohta, J., Kobayashi, A., Fujioka, H. (2005) Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition. Applied Physics Letters, 87 (22). 221907pp. doi:10.1063/1.2137876
Waki, I., Fujioka, H., Oshima, M., Miki, H., Okuyama, M. (2002) Low-temperature activation of Mg-doped GaN with thin Co and Pt films. Applied Surface Science, 190. 339-342 doi:10.1016/s0169-4332(01)00838-8
Hirata, S., Okamoto, K., Inoue, S., Kim, T-W., Ohta, J., Fujioka, H., Oshima, M. (2007) Epitaxial growth of AlN films on single-crystalline Ta substrates. Journal of Solid State Chemistry, 180. 2335-2339 doi:10.1016/j.jssc.2007.06.008
 
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