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Rudenja, S., Minko, A., Buchanan, D.A. (2010) Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements. Applied Surface Science, 257. 17-21 doi:10.1016/j.apsusc.2010.06.012

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Reference TypeJournal (article/letter/editorial)
TitleLow-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements
JournalApplied Surface Science
AuthorsRudenja, S.Author
Minko, A.Author
Buchanan, D.A.Author
Year2010 (October)Volume257
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2010.06.012Search in ResearchGate
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Mindat Ref. ID9915619Long-form Identifiermindat:1:5:9915619:4
GUID0
Full ReferenceRudenja, S., Minko, A., Buchanan, D.A. (2010) Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements. Applied Surface Science, 257. 17-21 doi:10.1016/j.apsusc.2010.06.012
Plain TextRudenja, S., Minko, A., Buchanan, D.A. (2010) Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements. Applied Surface Science, 257. 17-21 doi:10.1016/j.apsusc.2010.06.012
In(n.d.) Applied Surface Science Vol. 257. Elsevier BV

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