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Chang, M.L., Cheng, T.C., Lin, M.C., Lin, H.C., Chen, M.J. (2012) Improvement of oxidation resistance of copper by atomic layer deposition. Applied Surface Science, 258. 10128-10134 doi:10.1016/j.apsusc.2012.06.090

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Reference TypeJournal (article/letter/editorial)
TitleImprovement of oxidation resistance of copper by atomic layer deposition
JournalApplied Surface Science
AuthorsChang, M.L.Author
Cheng, T.C.Author
Lin, M.C.Author
Lin, H.C.Author
Chen, M.J.Author
Year2012 (October)Volume258
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2012.06.090Search in ResearchGate
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Mindat Ref. ID9918557Long-form Identifiermindat:1:5:9918557:6
GUID0
Full ReferenceChang, M.L., Cheng, T.C., Lin, M.C., Lin, H.C., Chen, M.J. (2012) Improvement of oxidation resistance of copper by atomic layer deposition. Applied Surface Science, 258. 10128-10134 doi:10.1016/j.apsusc.2012.06.090
Plain TextChang, M.L., Cheng, T.C., Lin, M.C., Lin, H.C., Chen, M.J. (2012) Improvement of oxidation resistance of copper by atomic layer deposition. Applied Surface Science, 258. 10128-10134 doi:10.1016/j.apsusc.2012.06.090
In(n.d.) Applied Surface Science Vol. 258. Elsevier BV

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