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Zhang, Jian, Zhang, Qilong, Yang, Hui, Wu, Huayu, Zhou, Juehui, Hu, Liang (2014) Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition. Applied Surface Science, 315. 110-115 doi:10.1016/j.apsusc.2014.07.117

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Reference TypeJournal (article/letter/editorial)
TitleBipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
JournalApplied Surface Science
AuthorsZhang, JianAuthor
Zhang, QilongAuthor
Yang, HuiAuthor
Wu, HuayuAuthor
Zhou, JuehuiAuthor
Hu, LiangAuthor
Year2014 (October)Volume315
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2014.07.117Search in ResearchGate
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Mindat Ref. ID9923672Long-form Identifiermindat:1:5:9923672:8
GUID0
Full ReferenceZhang, Jian, Zhang, Qilong, Yang, Hui, Wu, Huayu, Zhou, Juehui, Hu, Liang (2014) Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition. Applied Surface Science, 315. 110-115 doi:10.1016/j.apsusc.2014.07.117
Plain TextZhang, Jian, Zhang, Qilong, Yang, Hui, Wu, Huayu, Zhou, Juehui, Hu, Liang (2014) Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition. Applied Surface Science, 315. 110-115 doi:10.1016/j.apsusc.2014.07.117
In(n.d.) Applied Surface Science Vol. 315. Elsevier BV

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