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Tang, Lin, Maruyama, Hiraku, Han, Taihao, Nino, Juan C., Chen, Yonghong, Zhang, Dou (2020) Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks. Applied Surface Science, 515. 146015pp. doi:10.1016/j.apsusc.2020.146015

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Reference TypeJournal (article/letter/editorial)
TitleResistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks
JournalApplied Surface Science
AuthorsTang, LinAuthor
Maruyama, HirakuAuthor
Han, TaihaoAuthor
Nino, Juan C.Author
Chen, YonghongAuthor
Zhang, DouAuthor
Year2020 (June)Volume515
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2020.146015Search in ResearchGate
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Mindat Ref. ID9941612Long-form Identifiermindat:1:5:9941612:0
GUID0
Full ReferenceTang, Lin, Maruyama, Hiraku, Han, Taihao, Nino, Juan C., Chen, Yonghong, Zhang, Dou (2020) Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks. Applied Surface Science, 515. 146015pp. doi:10.1016/j.apsusc.2020.146015
Plain TextTang, Lin, Maruyama, Hiraku, Han, Taihao, Nino, Juan C., Chen, Yonghong, Zhang, Dou (2020) Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks. Applied Surface Science, 515. 146015pp. doi:10.1016/j.apsusc.2020.146015
In(n.d.) Applied Surface Science Vol. 515. Elsevier BV

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