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Liu, Bingbing, Qin, Fuwen, Wang, Dejun (2015) Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing. Applied Surface Science, 355. 59-63 doi:10.1016/j.apsusc.2015.07.100

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing
JournalApplied Surface Science
AuthorsLiu, BingbingAuthor
Qin, FuwenAuthor
Wang, DejunAuthor
Year2015 (November)Volume355
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2015.07.100Search in ResearchGate
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Mindat Ref. ID9926329Long-form Identifiermindat:1:5:9926329:0
GUID0
Full ReferenceLiu, Bingbing, Qin, Fuwen, Wang, Dejun (2015) Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing. Applied Surface Science, 355. 59-63 doi:10.1016/j.apsusc.2015.07.100
Plain TextLiu, Bingbing, Qin, Fuwen, Wang, Dejun (2015) Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing. Applied Surface Science, 355. 59-63 doi:10.1016/j.apsusc.2015.07.100
In(n.d.) Applied Surface Science Vol. 355. Elsevier BV

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Liu, Bingbing, Qin, Fuwen, Wang, Dejun (2016) Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing. Applied Surface Science, 364. 769-774 doi:10.1016/j.apsusc.2015.12.226
Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, Qin, Fuwen, Wang, Dejun (2011) Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma. Applied Surface Science, 257. 10172-10176 doi:10.1016/j.apsusc.2011.07.012
Huang, Lingqin, Liu, Bingbing, Zhu, Qiaozhi, Chen, Suhua, Gao, Mingchao, Qin, Fuwen, Wang, Dejun (2012) Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing. Applied Physics Letters, 100 (26). 263503pp. doi:10.1063/1.4730435
Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun (2014) Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma. Applied Physics Letters, 104 (20). 202101pp. doi:10.1063/1.4878661
Yang, Chao, Zhang, Fanglong, Yin, Zhipeng, Su, Yan, Qin, Fuwen, Wang, Dejun (2019) Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors. Applied Surface Science, 488. 293-302 doi:10.1016/j.apsusc.2019.05.241
Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, Qin, Fuwen, Wang, Dejun (2012) Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Annealing on the Electrical Properties of Ti and Ni Contacts to 4H-SiC. Japanese Journal of Applied Physics, 51. 81302 doi:10.1143/jjap.51.081302
Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, Qin, Fuwen, Wang, Dejun (2012) Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Annealing on the Electrical Properties of Ti and Ni Contacts to 4H-SiC. Japanese Journal of Applied Physics, 51 (8) 81302 doi:10.7567/jjap.51.081302
Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun (2014) Publisher's Note: “Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma” [Appl. Phys. Lett. 104, 202101 (2014)]. Applied Physics Letters, 104 (26). 269902pp. doi:10.1063/1.4886975
Zhu, Qiaozhi, Qin, Fuwen, Li, Wenbo, Wang, Dejun (2013) Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing. Applied Physics Letters, 103 (6). 62105pp. doi:10.1063/1.4818141
Yin, Zhipeng, Yang, Chao, Zhang, Fanglong, Su, Yan, Qin, Fuwen, Wang, Dejun (2020) Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors. Applied Surface Science, 531. 147312pp. doi:10.1016/j.apsusc.2020.147312
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