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Yang, Chao, Zhang, Fanglong, Yin, Zhipeng, Su, Yan, Qin, Fuwen, Wang, Dejun (2019) Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors. Applied Surface Science, 488. 293-302 doi:10.1016/j.apsusc.2019.05.241

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Reference TypeJournal (article/letter/editorial)
TitleInterface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors
JournalApplied Surface Science
AuthorsYang, ChaoAuthor
Zhang, FanglongAuthor
Yin, ZhipengAuthor
Su, YanAuthor
Qin, FuwenAuthor
Wang, DejunAuthor
Year2019 (September)Volume488
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2019.05.241Search in ResearchGate
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Mindat Ref. ID9938557Long-form Identifiermindat:1:5:9938557:4
GUID0
Full ReferenceYang, Chao, Zhang, Fanglong, Yin, Zhipeng, Su, Yan, Qin, Fuwen, Wang, Dejun (2019) Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors. Applied Surface Science, 488. 293-302 doi:10.1016/j.apsusc.2019.05.241
Plain TextYang, Chao, Zhang, Fanglong, Yin, Zhipeng, Su, Yan, Qin, Fuwen, Wang, Dejun (2019) Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors. Applied Surface Science, 488. 293-302 doi:10.1016/j.apsusc.2019.05.241
In(n.d.) Applied Surface Science Vol. 488. Elsevier BV

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Yin, Zhipeng, Yang, Chao, Zhang, Fanglong, Su, Yan, Qin, Fuwen, Wang, Dejun (2020) Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors. Applied Surface Science, 531. 147312pp. doi:10.1016/j.apsusc.2020.147312
Yang, Chao, Gu, Zhenghao, Yin, Zhipeng, Qin, Fuwen, Wang, Dejun (2019) Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress. Journal of Physics D: Applied Physics, 52. 405103pp. doi:10.1088/1361-6463/ab2faf
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Sun, Yunong, Yang, Chao, Yin, Zhipeng, Qin, Fuwen, Wang, Dejun (2019) Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors. Journal of Applied Physics, 125 (18). 185703pp. doi:10.1063/1.5084759
Zhu, Qiaozhi, Qin, Fuwen, Li, Wenbo, Wang, Dejun (2014) Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing. Physica B: Condensed Matter, 432. 89-95 doi:10.1016/j.physb.2013.09.043
Wei, Shengsheng, Yin, Zhipeng, Bai, Jiao, Xie, Weiwei, Qin, Fuwen, Su, Yan, Wang, Dejun (2023) The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations. Applied Surface Science, 614. 156161 doi:10.1016/j.apsusc.2022.156161
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