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Zhong, Yaozong, Zhou, Yu, Gao, Hongwei, Dai, Shujun, He, Junlei, Feng, Meixin, Sun, Qian, Zhang, Jijun, Zhao, Yanfei, DingSun, An, Yang, Hui (2017) Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl 2 /N 2 /O 2 plasma with a low-energy ion bombardment. Applied Surface Science, 420. 817-824 doi:10.1016/j.apsusc.2017.05.185

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Reference TypeJournal (article/letter/editorial)
TitleSelf-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl 2 /N 2 /O 2 plasma with a low-energy ion bombardment
JournalApplied Surface Science
AuthorsZhong, YaozongAuthor
Zhou, YuAuthor
Gao, HongweiAuthor
Dai, ShujunAuthor
He, JunleiAuthor
Feng, MeixinAuthor
Sun, QianAuthor
Zhang, JijunAuthor
Zhao, YanfeiAuthor
DingSun, AnAuthor
Yang, HuiAuthor
Year2017 (October)Volume420
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2017.05.185Search in ResearchGate
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Mindat Ref. ID9931510Long-form Identifiermindat:1:5:9931510:4
GUID0
Full ReferenceZhong, Yaozong, Zhou, Yu, Gao, Hongwei, Dai, Shujun, He, Junlei, Feng, Meixin, Sun, Qian, Zhang, Jijun, Zhao, Yanfei, DingSun, An, Yang, Hui (2017) Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl 2 /N 2 /O 2 plasma with a low-energy ion bombardment. Applied Surface Science, 420. 817-824 doi:10.1016/j.apsusc.2017.05.185
Plain TextZhong, Yaozong, Zhou, Yu, Gao, Hongwei, Dai, Shujun, He, Junlei, Feng, Meixin, Sun, Qian, Zhang, Jijun, Zhao, Yanfei, DingSun, An, Yang, Hui (2017) Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl 2 /N 2 /O 2 plasma with a low-energy ion bombardment. Applied Surface Science, 420. 817-824 doi:10.1016/j.apsusc.2017.05.185
In(n.d.) Applied Surface Science Vol. 420. Elsevier BV

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