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Whitton, J. L., Carter, G., Freeman, J. H., Gard, G. A. (1969) The implantation profiles of 10, 20 and 40 keV 85Kr in gallium arsenide. Journal of Materials Science, 4. 208-217 doi:10.1007/bf00549920

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Reference TypeJournal (article/letter/editorial)
TitleThe implantation profiles of 10, 20 and 40 keV 85Kr in gallium arsenide
JournalJournal of Materials Science
AuthorsWhitton, J. L.Author
Carter, G.Author
Freeman, J. H.Author
Gard, G. A.Author
Year1969 (March)Volume4
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00549920Search in ResearchGate
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Mindat Ref. ID9980983Long-form Identifiermindat:1:5:9980983:4
GUID0
Full ReferenceWhitton, J. L., Carter, G., Freeman, J. H., Gard, G. A. (1969) The implantation profiles of 10, 20 and 40 keV 85Kr in gallium arsenide. Journal of Materials Science, 4. 208-217 doi:10.1007/bf00549920
Plain TextWhitton, J. L., Carter, G., Freeman, J. H., Gard, G. A. (1969) The implantation profiles of 10, 20 and 40 keV 85Kr in gallium arsenide. Journal of Materials Science, 4. 208-217 doi:10.1007/bf00549920
In(n.d.) Journal of Materials Science Vol. 4. Springer Science and Business Media LLC

See Also

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Dearnaley, G., Freeman, J. H., Gard, G. A., Wilkins, M. A. (1968) Implantation profiles of 32P channeled into silicon crystals. Canadian Journal of Physics, 46. 587-595 doi:10.1139/p68-073
Carter, G., Nobes, M. J., Whitton, J. L. (1978) The stability of equilibrium surface topography developed by sputtering. Journal of Materials Science, 13. 2725-2728 doi:10.1007/bf02402765
Harris, J. S., Nannichi, Y., Pearson, G. L., Day, G. F. (1969) Ohmic Contacts to Solution‐Grown Gallium Arsenide. Journal of Applied Physics, 40 (11). 4575-4581 doi:10.1063/1.1657234
Nicholas, K H, Goldsmith, B J, Freeman, J H, Gard, G A, Stephen, J, Smith, B J (1972) The evaluation of the Harwell-Lintott industrial ion implantation machine by making silicon planar resistors. Journal of Physics E: Scientific Instruments, 5 (4). 309-310 doi:10.1088/0022-3735/5/4/005
Brice, J. C., Roberts, J. A., Smith, G. (1967) Mass spectrometric studies of impurities in gallium arsenide crystals. Journal of Materials Science, 2. 131-138 doi:10.1007/bf00549572
Tunkasiri, T., Lewis, D. (1975) Damage in gallium arsenide crystals produced by ion implantation, abrasion and ball-milling. Journal of Materials Science, 10. 1367-1374 doi:10.1007/bf00540827
Spitzer, W. G., Panish, M. B. (1969) Silicon‐Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site Distribution. Journal of Applied Physics, 40 (10). 4200-4202 doi:10.1063/1.1657165
Lavrent'eva, L. G., Kataev, Yu. G., Moskovkin, V. A. (1969) Anisotropy in the electrical properties of epitaxial n-type gallium arsenide. Soviet Physics Journal, 12. 1510-1511 doi:10.1007/bf00838318
Ruch, J. G., Kino, G. S. (1967) MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GALLIUM ARSENIDE. Applied Physics Letters, 10 (2). 40-42 doi:10.1063/1.1754837
Nobes, M. J., Colligon, J. S., Carter, G. (1969) The equilibrium topography of sputtered amorphous solids. Journal of Materials Science, 4. 730-733 doi:10.1007/bf00742430
Lavrent'eva, L. G., Nesteryuk, L. G., Sennikova, V. M. (1972) Orientational effects in the growth of gallium arsenide layers in the gallium arsenide-zinc chloride system. Soviet Physics Journal, 15. 871-876 doi:10.1007/bf00912229
 
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