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Hirai, Toshio, Goto, Takashi (1981) Preparation of amorphous Si3N4-C plate by chemical vapour deposition. Journal of Materials Science, 16. 17-23 doi:10.1007/bf00552054

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of amorphous Si3N4-C plate by chemical vapour deposition
JournalJournal of Materials Science
AuthorsHirai, ToshioAuthor
Goto, TakashiAuthor
Year1981 (January)Volume16
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00552054Search in ResearchGate
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Mindat Ref. ID9984695Long-form Identifiermindat:1:5:9984695:0
GUID0
Full ReferenceHirai, Toshio, Goto, Takashi (1981) Preparation of amorphous Si3N4-C plate by chemical vapour deposition. Journal of Materials Science, 16. 17-23 doi:10.1007/bf00552054
Plain TextHirai, Toshio, Goto, Takashi (1981) Preparation of amorphous Si3N4-C plate by chemical vapour deposition. Journal of Materials Science, 16. 17-23 doi:10.1007/bf00552054
In(n.d.) Journal of Materials Science Vol. 16. Springer Science and Business Media LLC

See Also

These are possibly similar items as determined by title/reference text matching only.

Goto, Takashi, Hirai, Toshio (1983) D.C. electrical conductivity of amorphous Si3N4-C composites prepared by chemical vapour deposition. Journal of Materials Science, 18. 383-390 doi:10.1007/bf00560626
Goto, Takashi, Hirai, Toshio (1987) High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition. Journal of Materials Science, 22. 2842-2846 doi:10.1007/bf01086480
Hirai, Toshio, Goto, Takashi (1981) Density and deposition rates of amorphous CVD-Si3N4 including carbon. Journal of Materials Science, 16. 2877-2882 doi:10.1007/bf02402853
Hirai, Toshio, Niihara, Koichi, Goto, Takashi (1977) Rapid chemical vapour-deposition of Si3N4. Journal of Materials Science, 12. 631-632 doi:10.1007/bf00540292
Goto, Takashi, Hirai, Toshio (1983) Etching of chemically vapour-deposited amorphous Si3N4-C composites in HF solution. Journal of Materials Science, 18. 3387-3392 doi:10.1007/bf00544164
Jiang, Chorn-Cherng, Goto, Takashi, Hirai, Toshio (1990) Preparation of titanium carbide plates by chemical vapour deposition. Journal of Materials Science, 25. 1086-1093 doi:10.1007/bf03372207
Goto, Takashi, Hirai, Toshio (1989) Dielectric properties of chemically vapour-deposited Si3N4. Journal of Materials Science, 24. 821-826 doi:10.1007/bf01148763
Chen, Lidong, Goto, Takashi, Hirai, Toshio (1989) Preparation of silicon carbide powders by chemical vapour deposition of the SiH4-CH4-H2 system. Journal of Materials Science, 24. 3824-3830 doi:10.1007/bf01168942
Chen, Lidong, Goto, Takashi, Hirai, Toshio (1990) Preparation of silicon carbide powders by chemical vapour deposition of the (CH3)2SiCl2-H2 system. Journal of Materials Science, 25. 4614-4621 doi:10.1007/bf01129915
Mukaida, Masakazu, Goto, Takashi, Hirai, Toshio (1992) Preparation of SiB4±x and SiB6 plates by chemical vapour deposition of SiCl4 + B2H6 system. Journal of Materials Science, 27. 255-262 doi:10.1007/bf02403671
Mukaida, Masakazu, Goto, Takashi, Hirai, Toshio (1990) Morphology and deposition rates of TiB2 prepared by chemical vapour deposition of TiCl4 + B2H6 system. Journal of Materials Science, 25. 1069-1075 doi:10.1007/bf03372205
 
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