Reference Type | Journal (article/letter/editorial) |
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Title | High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition |
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Journal | Journal of Materials Science |
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Authors | Goto, Takashi | Author |
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Hirai, Toshio | Author |
Year | 1987 (August) | Volume | 22 |
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Publisher | Springer Science and Business Media LLC |
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DOI | doi:10.1007/bf01086480Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 9988322 | Long-form Identifier | mindat:1:5:9988322:5 |
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GUID | 0 |
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Full Reference | Goto, Takashi, Hirai, Toshio (1987) High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition. Journal of Materials Science, 22. 2842-2846 doi:10.1007/bf01086480 |
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Plain Text | Goto, Takashi, Hirai, Toshio (1987) High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition. Journal of Materials Science, 22. 2842-2846 doi:10.1007/bf01086480 |
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In | (n.d.) Journal of Materials Science Vol. 22. Springer Science and Business Media LLC |
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