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Tang, Zeguo, Wang, Wenbin, Wang, Desheng, Liu, Dequan, Liu, Qiming, He, Deyan (2010) The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD. Journal of Alloys and Compounds, 504. 403-406 doi:10.1016/j.jallcom.2010.05.128

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD
JournalJournal of Alloys and Compounds
AuthorsTang, ZeguoAuthor
Wang, WenbinAuthor
Wang, DeshengAuthor
Liu, DequanAuthor
Liu, QimingAuthor
He, DeyanAuthor
Year2010 (August)Volume504
PublisherElsevier BV
DOIdoi:10.1016/j.jallcom.2010.05.128Search in ResearchGate
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Mindat Ref. ID11896799Long-form Identifiermindat:1:5:11896799:2
GUID0
Full ReferenceTang, Zeguo, Wang, Wenbin, Wang, Desheng, Liu, Dequan, Liu, Qiming, He, Deyan (2010) The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD. Journal of Alloys and Compounds, 504. 403-406 doi:10.1016/j.jallcom.2010.05.128
Plain TextTang, Zeguo, Wang, Wenbin, Wang, Desheng, Liu, Dequan, Liu, Qiming, He, Deyan (2010) The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD. Journal of Alloys and Compounds, 504. 403-406 doi:10.1016/j.jallcom.2010.05.128
In(n.d.) Journal of Alloys and Compounds Vol. 504. Elsevier BV

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