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Wang, Desheng, Liu, Qiming, Li, Fei, Qin, Yanli, Liu, Dequan, Tang, Zeguo, Peng, Shanglong, He, Deyan (2010) Effect of Ar in the source gas on the microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD. Applied Surface Science, 257. 1342-1346 doi:10.1016/j.apsusc.2010.08.068

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Reference TypeJournal (article/letter/editorial)
TitleEffect of Ar in the source gas on the microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD
JournalApplied Surface Science
AuthorsWang, DeshengAuthor
Liu, QimingAuthor
Li, FeiAuthor
Qin, YanliAuthor
Liu, DequanAuthor
Tang, ZeguoAuthor
Peng, ShanglongAuthor
He, DeyanAuthor
Year2010 (December)Volume257
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2010.08.068Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9916908Long-form Identifiermindat:1:5:9916908:2
GUID0
Full ReferenceWang, Desheng, Liu, Qiming, Li, Fei, Qin, Yanli, Liu, Dequan, Tang, Zeguo, Peng, Shanglong, He, Deyan (2010) Effect of Ar in the source gas on the microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD. Applied Surface Science, 257. 1342-1346 doi:10.1016/j.apsusc.2010.08.068
Plain TextWang, Desheng, Liu, Qiming, Li, Fei, Qin, Yanli, Liu, Dequan, Tang, Zeguo, Peng, Shanglong, He, Deyan (2010) Effect of Ar in the source gas on the microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD. Applied Surface Science, 257. 1342-1346 doi:10.1016/j.apsusc.2010.08.068
In(n.d.) Applied Surface Science Vol. 257. Elsevier BV

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