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Oe, Kunishige, Ando, Seigo, Sugiyama, Koichi (1981) InSb1-xBixFilms Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l303

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Reference TypeJournal (article/letter/editorial)
TitleInSb1-xBixFilms Grown by Molecular Beam Epitaxy
JournalJapanese Journal of Applied Physics
AuthorsOe, KunishigeAuthor
Ando, SeigoAuthor
Sugiyama, KoichiAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.l303Search in ResearchGate
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Mindat Ref. ID14984960Long-form Identifiermindat:1:5:14984960:1
GUID0
Full ReferenceOe, Kunishige, Ando, Seigo, Sugiyama, Koichi (1981) InSb1-xBixFilms Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l303
Plain TextOe, Kunishige, Ando, Seigo, Sugiyama, Koichi (1981) InSb1-xBixFilms Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l303
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

See Also

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Oe, Kunishige, Ando, Seigo, Sugiyama, Koichi (1980) RHEED Study of InSb Films Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 19 (7) doi:10.1143/jjap.19.l417
Tsubaki, Kotaro, Ando, Seigo, Oe, Kunishige, Sugiyama, Koichi (1979) Surface Damage in InP Induced during SiO2Deposition by rf Sputtering. Japanese Journal of Applied Physics, 18 (6) 1191-1192 doi:10.1143/jjap.18.1191
Kano, Hiroyuki, Oe, Kunishige, Ando, Seigo, Sugiyama, Koichi (1978) Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method. Japanese Journal of Applied Physics, 17 (10) 1887-1888 doi:10.1143/jjap.17.1887
Oe, Kunishige, Ando, Seigo, Sugiyama, Koichi (1977) 1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature. Japanese Journal of Applied Physics, 16 (7) 1273-1274 doi:10.1143/jjap.16.1273
Oe, Kunishige, Ando, Seigo, Sugiyama, Koichi (1977) Surface Emitting LED's for the 1.2–1.3 µm Wavelength with GaInAsP/InP Double Heterostructures. Japanese Journal of Applied Physics, 16 (9) 1693-1694 doi:10.1143/jjap.16.1693
Yoshimoto, Masahiro, Murata, Satoshi, Chayahara, Akiyoshi, Horino, Yuji, Saraie, Junji, Oe, Kunishige (2003) Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l1235
Feng, Gan, Yoshimoto, Masahiro, Oe, Kunishige, Chayahara, Akiyoshi, Horino, Yuji (2005) New III-V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 44. doi:10.1143/jjap.44.l1161
Sugiyama, Koichi, Oe, Kunishige (1977) Phase Diagram of the GaAs1-xSbxSystem. Japanese Journal of Applied Physics, 16 (1) 197-198 doi:10.1143/jjap.16.197
Yoshimoto, Masahiro, Huang, Wei, Takehara, Yuji, Saraie, Junji, Chayahara, Akiyoshi, Horino, Yuji, Oe, Kunishige (2004) New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l845
Takeuchi, Hiroaki, Shinohara, Masanori, Oe, Kunishige (1986) An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l303
Kondo, Naoto, Kawashima, Minoru, Ando, Seigo, Oe, Kunishige (1985) GaAs lateral epitaxial growth over a tungsten grating by molecular beam epitaxy. Applied Physics Letters, 46 (4). 436-438 doi:10.1063/1.95604
 
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