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Takeuchi, Hiroaki, Shinohara, Masanori, Oe, Kunishige (1986) An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l303

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Reference TypeJournal (article/letter/editorial)
TitleAn In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate
JournalJapanese Journal of Applied Physics
AuthorsTakeuchi, HiroakiAuthor
Shinohara, MasanoriAuthor
Oe, KunishigeAuthor
Year1986 (April 20)Volume25
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.25.l303Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14989021Long-form Identifiermindat:1:5:14989021:4
GUID0
Full ReferenceTakeuchi, Hiroaki, Shinohara, Masanori, Oe, Kunishige (1986) An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l303
Plain TextTakeuchi, Hiroaki, Shinohara, Masanori, Oe, Kunishige (1986) An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l303
In(1986) Japanese Journal of Applied Physics Vol. 25. Japan Society of Applied Physics

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Shinohara, Masanori, Ito, Tomonori, Yamada, Kohji, Imamura, Yoshihiro (1985) Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs Substrates. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l711
Noto, Nobuhiko, Kitagawa, Yutaka, Takahashi, Tohru, Takenaka, Takao (1986) Photoluminescence Studies on Semi-Insulating In-Doped Dislocation-Free GaAs Grown by LEC Method. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l394
Oe, Kunishige, Takeuchi, Hiroaki (1987) MBE Growth of Ga1-xInxAs Alloy on Si Substrate. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l120
Iimura, Yasufumi, Kawabe, Mitsuo (1986) Be Doping Effect on Growth Kinetics of GaAs Grown by MBE. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l81
Shinohara, Masanori, Ito, Tomonori, Yamada, Kohji, Imamura, Yoshihiro (1985) Dislocation Propagation into MBE Grown GaAs Layers under the Condition of Misfit Dislocation Generation. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l818
Shinohara, Masanori, Ito, Tomonori, Wada, Kazumi, Imamura, Yoshihiro (1984) Electrical Properties of Oval Defects in GaAs Grown by MBE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l371
Oe, Kunishige, Ando, Seigo, Sugiyama, Koichi (1981) InSb1-xBixFilms Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l303
Iimura, Yasufumi, Takasugi, Hidetoshi, Kawabe, Mitsuo (1986) Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE. Japanese Journal of Applied Physics, 25. 95-98 doi:10.1143/jjap.25.95
Muto, Shunichi, Inata, Tsuguo, Ohnishi, Hiroaki, Yokoyama, Naoki, Hiyamizu, Satoshi (1986) Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l577
Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji (1986) Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l513
Tone, Kiyoshi, Nakayama, Takao, Iechi, Hiroyuki, Ohtsu, Kazuyoshi, Kukimoto, Hiroshi (1986) Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l429
 
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