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Oe, Kunishige, Takeuchi, Hiroaki (1987) MBE Growth of Ga1-xInxAs Alloy on Si Substrate. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l120

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Reference TypeJournal (article/letter/editorial)
TitleMBE Growth of Ga1-xInxAs Alloy on Si Substrate
JournalJapanese Journal of Applied Physics
AuthorsOe, KunishigeAuthor
Takeuchi, HiroakiAuthor
Year1987 (February 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l120Search in ResearchGate
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Mindat Ref. ID14989850Long-form Identifiermindat:1:5:14989850:0
GUID0
Full ReferenceOe, Kunishige, Takeuchi, Hiroaki (1987) MBE Growth of Ga1-xInxAs Alloy on Si Substrate. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l120
Plain TextOe, Kunishige, Takeuchi, Hiroaki (1987) MBE Growth of Ga1-xInxAs Alloy on Si Substrate. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l120
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

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Takeuchi, Hiroaki, Shinohara, Masanori, Oe, Kunishige (1986) An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l303
Kawamura, Yuichi, Wakita, Koichi, Oe, Kunishige (1987) Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW Diodes. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1603
Okamoto, Hiroshi, Oe, Kunishige (1998) Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE. Japanese Journal of Applied Physics, 37. 1608-1613 doi:10.1143/jjap.37.1608
Oe, Kunishige (2002) Characteristics of Semiconductor Alloy GaAs1-xBix. Japanese Journal of Applied Physics, 41. 2801-2806 doi:10.1143/jjap.41.2801
Seki, Akinori, Konushi, Fumihiro, Kudo, Jun, Kakimoto, Seizo, Fukushima, Takashi, Koba, Masayoshi (1987) MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1587
Ito, Hiroshi, Ishibashi, Tadao (1987) An Indium-Free MBE Growth of AlGaAs/GaAs HBTs. Japanese Journal of Applied Physics, 26. 439-443 doi:10.1143/jjap.26.439
Soga, Tetsuo, Sakai, Shiro, Umeno, Masayoshi, Hattori, Shuzo (1987) Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers. Japanese Journal of Applied Physics, 26. 252-255 doi:10.1143/jjap.26.252
Tabe, Michiharu, Arai, Kunihiro, Nakamura, Hiroaki (1981) Effect of Growth Temperature on Si MBE Film. Japanese Journal of Applied Physics, 20 (4) 703-708 doi:10.1143/jjap.20.703
Oe, Kunishige, Okamoto, Hiroshi (1998) New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1283
Feng, Gan, Oe, Kunishige, Yoshimoto, Masahiro (2007) Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l764
Nozaki, Hiroshi, Ishizawa, Yoshio, Fukunaga, Osamu, Wada, Hiroaki (1987) Oxygen Effect on the Superconductivity of Ba2YCu3O7-y. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1180
 
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