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Tabe, Michiharu, Arai, Kunihiro, Nakamura, Hiroaki (1981) Effect of Growth Temperature on Si MBE Film. Japanese Journal of Applied Physics, 20 (4) 703-708 doi:10.1143/jjap.20.703

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Reference TypeJournal (article/letter/editorial)
TitleEffect of Growth Temperature on Si MBE Film
JournalJapanese Journal of Applied Physics
AuthorsTabe, MichiharuAuthor
Arai, KunihiroAuthor
Nakamura, HiroakiAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.703Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984918Long-form Identifiermindat:1:5:14984918:2
GUID0
Full ReferenceTabe, Michiharu, Arai, Kunihiro, Nakamura, Hiroaki (1981) Effect of Growth Temperature on Si MBE Film. Japanese Journal of Applied Physics, 20 (4) 703-708 doi:10.1143/jjap.20.703
Plain TextTabe, Michiharu, Arai, Kunihiro, Nakamura, Hiroaki (1981) Effect of Growth Temperature on Si MBE Film. Japanese Journal of Applied Physics, 20 (4) 703-708 doi:10.1143/jjap.20.703
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

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Kunii, Yasuo, Tabe, Michiharu, Kajiyama, Kenji (1982) Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si. Japanese Journal of Applied Physics, 21. 1431-1436 doi:10.1143/jjap.21.1431
Tabe, Michiharu, Takahashi, Mitsutoshi, Sakakibara, Yutaka (1987) Oxygen-Doped Si Epitaxial Film (OXSEF) Japanese Journal of Applied Physics, 26. 1830-1837 doi:10.1143/jjap.26.1830
Tabe, Michiharu, Arai, Kunihiro, Nakamura, Hiroaki (1980) Persistence of Si(111)7 Γ— 7 surface structure under air exposure. Surface Science, 99 (3). doi:10.1016/0039-6028(80)90544-0
Tabe, Michiharu, Arai, Kunihiro, Nakamura, Hiroaki (1980) Persistence of Si(111) 7Γ—7 surface structure under air exposure. Surface Science Letters, 99 (3). doi:10.1016/0167-2584(80)90452-1
Kunii, Yasuo, Tabe, Michiharu (1985) Lateral Solid-Phase Epitaxy of Vacuum-Deposited Amorphous Si Film over Recessed SiO2Patterns. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l352
Tabe, Michiharu, Kumezawa, Minoru, Ishikawa, Yasuhiko (2001) Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l131
Tabe, Michiharu (1982) Etching of SiO2Films by Si in Ultra-High Vacuum. Japanese Journal of Applied Physics, 21. 534-538 doi:10.1143/jjap.21.534
Oe, Kunishige, Takeuchi, Hiroaki (1987) MBE Growth of Ga1-xInxAs Alloy on Si Substrate. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l120
Kunii, Yasuo, Tabe, Michiharu, Sakakibara, Yutaka (1987) Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si Films. Japanese Journal of Applied Physics, 26. 1008-1013 doi:10.1143/jjap.26.1008
Ikeda, Hiroya, Nuryadi, Ratno, Ishikawa, Yasuhiko, Tabe, Michiharu (2004) Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l759
Karasawa, Takeshi, Kunii, Yasuo, Tabe, Michiharu (1993) Thermal Stability of B-Doped SiGe Layers Formed on Si Substrates by Si-GeH4-B2H6Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 32. 1039-1044 doi:10.1143/jjap.32.1039
 
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