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Kunii, Yasuo, Tabe, Michiharu, Kajiyama, Kenji (1982) Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si. Japanese Journal of Applied Physics, 21. 1431-1436 doi:10.1143/jjap.21.1431

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Reference TypeJournal (article/letter/editorial)
TitleSolid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si
JournalJapanese Journal of Applied Physics
AuthorsKunii, YasuoAuthor
Tabe, MichiharuAuthor
Kajiyama, KenjiAuthor
Year1982 (October 20)Volume21
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.21.1431Search in ResearchGate
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Mindat Ref. ID14985356Long-form Identifiermindat:1:5:14985356:1
GUID0
Full ReferenceKunii, Yasuo, Tabe, Michiharu, Kajiyama, Kenji (1982) Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si. Japanese Journal of Applied Physics, 21. 1431-1436 doi:10.1143/jjap.21.1431
Plain TextKunii, Yasuo, Tabe, Michiharu, Kajiyama, Kenji (1982) Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si. Japanese Journal of Applied Physics, 21. 1431-1436 doi:10.1143/jjap.21.1431
In(1982) Japanese Journal of Applied Physics Vol. 21. Japan Society of Applied Physics

See Also

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Kunii, Yasuo, Tabe, Michiharu, Kajiyama, Kenji (1984) Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary. Journal of Applied Physics, 56 (2). 279-285 doi:10.1063/1.333958
Kunii, Yasuo, Tabe, Michiharu (1985) Lateral Solid-Phase Epitaxy of Vacuum-Deposited Amorphous Si Film over Recessed SiO2Patterns. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l352
Kunii, Yasuo, Tabe, Michiharu, Kajiyama, Kenji (1983) Lateral-Epitaxy of CVD a-Si over SiO2Stripe-Area by Furnace-Annealing. Japanese Journal of Applied Physics, 22. 605 doi:10.7567/jjaps.22s1.605
Kunii, Yasuo, Tabe, Michiharu, Kajiyama, Kenji (1983) Solid‐phase lateral epitaxy of chemical‐vapor‐deposited amorphous silicon by furnace annealing. Journal of Applied Physics, 54 (5). 2847-2849 doi:10.1063/1.332275
Kunii, Yasuo, Tabe, Michiharu, Sakakibara, Yutaka (1987) Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si Films. Japanese Journal of Applied Physics, 26. 1008-1013 doi:10.1143/jjap.26.1008
Karasawa, Takeshi, Kunii, Yasuo, Tabe, Michiharu (1993) Thermal Stability of B-Doped SiGe Layers Formed on Si Substrates by Si-GeH4-B2H6Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 32. 1039-1044 doi:10.1143/jjap.32.1039
Tabe, Michiharu, Kajiyama, Kenji (1983) Kinetics of Antimony Doping in Silicon Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 22. 423-428 doi:10.1143/jjap.22.423
Tabe, Michiharu (1982) Etching of SiO2Films by Si in Ultra-High Vacuum. Japanese Journal of Applied Physics, 21. 534-538 doi:10.1143/jjap.21.534
Kunii, Yasuo, Sakakibara, Yutaka (1987) Si Surface Cleaning by Si2H6–H2Gas Etching and Its Effects on Solid-Phase Epitaxy. Japanese Journal of Applied Physics, 26. 1816-1822 doi:10.1143/jjap.26.1816
Tabe, Michiharu, Takahashi, Mitsutoshi, Sakakibara, Yutaka (1987) Oxygen-Doped Si Epitaxial Film (OXSEF) Japanese Journal of Applied Physics, 26. 1830-1837 doi:10.1143/jjap.26.1830
Tabe, Michiharu, Arai, Kunihiro, Nakamura, Hiroaki (1981) Effect of Growth Temperature on Si MBE Film. Japanese Journal of Applied Physics, 20 (4) 703-708 doi:10.1143/jjap.20.703
 
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