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Saeki, Masayuki, Arimura, Hiroaki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) La Induced Passivation of High-kBulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pa01

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Reference TypeJournal (article/letter/editorial)
TitleLa Induced Passivation of High-kBulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2Stacks
JournalJapanese Journal of Applied Physics
AuthorsSaeki, MasayukiAuthor
Arimura, HiroakiAuthor
Kitano, NaomuAuthor
Hosoi, TakujiAuthor
Shimura, TakayoshiAuthor
Watanabe, HeijiAuthor
Year2011 (October 1)Volume50
Issue10
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.10pa01Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15037114Long-form Identifiermindat:1:5:15037114:6
GUID0
Full ReferenceSaeki, Masayuki, Arimura, Hiroaki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) La Induced Passivation of High-kBulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pa01
Plain TextSaeki, Masayuki, Arimura, Hiroaki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) La Induced Passivation of High-kBulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pa01
In(2011, October) Japanese Journal of Applied Physics Vol. 50 (10) Japan Society of Applied Physics

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Saeki, Masayuki, Arimura, Hiroaki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) La Induced Passivation of High-$k$ Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO$_{2}$ Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pa01
Yamamoto, Takashi, Ogawa, Shingo, Arimura, Hiroaki, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pa02
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Arimura, Hiroaki, Odake, Yuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film. Applied Physics Letters, 99 (14). 142907pp. doi:10.1063/1.3646378
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