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Arimura, Hiroaki, Horie, Shinya, Oku, Yudai, Minami, Takashi, Kitano, Naomu, Kosuda, Motomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2008) Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method. Applied Surface Science, 254. 6119-6122 doi:10.1016/j.apsusc.2008.02.133

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Reference TypeJournal (article/letter/editorial)
TitleStructural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method
JournalApplied Surface Science
AuthorsArimura, HiroakiAuthor
Horie, ShinyaAuthor
Oku, YudaiAuthor
Minami, TakashiAuthor
Kitano, NaomuAuthor
Kosuda, MotomuAuthor
Hosoi, TakujiAuthor
Shimura, TakayoshiAuthor
Watanabe, HeijiAuthor
Year2008 (July)Volume254
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2008.02.133Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9911466Long-form Identifiermindat:1:5:9911466:6
GUID0
Full ReferenceArimura, Hiroaki, Horie, Shinya, Oku, Yudai, Minami, Takashi, Kitano, Naomu, Kosuda, Motomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2008) Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method. Applied Surface Science, 254. 6119-6122 doi:10.1016/j.apsusc.2008.02.133
Plain TextArimura, Hiroaki, Horie, Shinya, Oku, Yudai, Minami, Takashi, Kitano, Naomu, Kosuda, Motomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2008) Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method. Applied Surface Science, 254. 6119-6122 doi:10.1016/j.apsusc.2008.02.133
In(n.d.) Applied Surface Science Vol. 254. Elsevier BV

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Arimura, Hiroaki, Oku, Yudai, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2010) Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks. Journal of Applied Physics, 107 (3). 34104pp. doi:10.1063/1.3284952
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Naitou, Y., Arimura, H., Kitano, N., Horie, S., Minami, T., Kosuda, M., Ogiso, H., Hosoi, T., Shimura, T., Watanabe, H. (2008) Charge trapping properties in TiO[sub 2]∕HfSiO∕SiO[sub 2] gate stacks probed by scanning capacitance microscopy. Applied Physics Letters, 92 (1). 12112pp. doi:10.1063/1.2828863
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