Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Arimura, Hiroaki, Oku, Yudai, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2010) Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks. Journal of Applied Physics, 107 (3). 34104pp. doi:10.1063/1.3284952

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleFabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks
JournalJournal of Applied Physics
AuthorsArimura, HiroakiAuthor
Oku, YudaiAuthor
Saeki, MasayukiAuthor
Kitano, NaomuAuthor
Hosoi, TakujiAuthor
Shimura, TakayoshiAuthor
Watanabe, HeijiAuthor
Year2010 (February)Volume107
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3284952Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5172012Long-form Identifiermindat:1:5:5172012:8
GUID0
Full ReferenceArimura, Hiroaki, Oku, Yudai, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2010) Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks. Journal of Applied Physics, 107 (3). 34104pp. doi:10.1063/1.3284952
Plain TextArimura, Hiroaki, Oku, Yudai, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2010) Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks. Journal of Applied Physics, 107 (3). 34104pp. doi:10.1063/1.3284952
In(2010, February) Journal of Applied Physics Vol. 107 (3) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Arimura, Hiroaki, Horie, Shinya, Oku, Yudai, Minami, Takashi, Kitano, Naomu, Kosuda, Motomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2008) Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method. Applied Surface Science, 254. 6119-6122 doi:10.1016/j.apsusc.2008.02.133
Saeki, Masayuki, Arimura, Hiroaki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) La Induced Passivation of High-$k$ Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO$_{2}$ Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pa01
Arimura, Hiroaki, Kitano, Naomu, Naitou, Yuichi, Oku, Yudai, Minami, Takashi, Kosuda, Motomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2008) Excellent electrical properties of TiO2∕HfSiO∕SiO2 layered higher-k gate dielectrics with sub-1nm equivalent oxide thickness. Applied Physics Letters, 92 (21). 212902pp. doi:10.1063/1.2929680
Yamamoto, Takashi, Ogawa, Shingo, Arimura, Hiroaki, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pa02
Yamamoto, Takashi, Ogawa, Shingo, Arimura, Hiroaki, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pa02
Saeki, Masayuki, Arimura, Hiroaki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) La Induced Passivation of High-kBulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pa01
Arimura, Hiroaki, Odake, Yuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film. Applied Physics Letters, 99 (14). 142907pp. doi:10.1063/1.3646378
Kita, Yuki, Yoshida, Shinichi, Hosoi, Takuji, Shimura, Takayoshi, Shiraishi, Kenji, Nara, Yasuo, Yamada, Keisaku, Watanabe, Heiji (2009) Systematic study on work-function-shift in metal/Hf-based high-k gate stacks. Applied Physics Letters, 94 (12). 122905pp. doi:10.1063/1.3103314
Kitano, Naomu, Horie, Shinya, Arimura, Hiroaki, Kawahara, Takaaki, Sakashita, Shinsuke, Nishida, Yukio, Yugami, Jiro, Minami, Takashi, Kosuda, Motomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2007) Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition BasedIn situMethod. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l1111
Watanabe, Heiji, Horie, Shinya, Minami, Takashi, Kitano, Naomu, Kosuda, Motomu, Shimura, Takayoshi, Yasutake, Kiyoshi (2007) Impact of Physical Vapor Deposition-BasedIn situFabrication Method on Metal/High-kGate Stacks. Japanese Journal of Applied Physics, 46 (4) 1910-1915 doi:10.1143/jjap.46.1910
Minoura, Yuya, Kasuya, Atsushi, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2013) Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics. Applied Physics Letters, 103 (3). 33502pp. doi:10.1063/1.4813829
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 27, 2025 13:08:37
Go to top of page