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Kouda, Miyuki, Suzuki, Takuya, Kakushima, Kuniyuki, Ahmet, Parhat, Iwai, Hiroshi, Yasuda, Tetsuji (2012) Electrical Properties of CeO2/La2O3Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition. Japanese Journal of Applied Physics, 51 (12) 121101 doi:10.7567/jjap.51.121101

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Reference TypeJournal (article/letter/editorial)
TitleElectrical Properties of CeO2/La2O3Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition
JournalJapanese Journal of Applied Physics
AuthorsKouda, MiyukiAuthor
Suzuki, TakuyaAuthor
Kakushima, KuniyukiAuthor
Ahmet, ParhatAuthor
Iwai, HiroshiAuthor
Yasuda, TetsujiAuthor
Year2012 (December 1)Volume51
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.121101Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15041985Long-form Identifiermindat:1:5:15041985:5
GUID0
Full ReferenceKouda, Miyuki, Suzuki, Takuya, Kakushima, Kuniyuki, Ahmet, Parhat, Iwai, Hiroshi, Yasuda, Tetsuji (2012) Electrical Properties of CeO2/La2O3Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition. Japanese Journal of Applied Physics, 51 (12) 121101 doi:10.7567/jjap.51.121101
Plain TextKouda, Miyuki, Suzuki, Takuya, Kakushima, Kuniyuki, Ahmet, Parhat, Iwai, Hiroshi, Yasuda, Tetsuji (2012) Electrical Properties of CeO2/La2O3Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition. Japanese Journal of Applied Physics, 51 (12) 121101 doi:10.7567/jjap.51.121101
In(2012, December) Japanese Journal of Applied Physics Vol. 51 (12) Japan Society of Applied Physics

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