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Goto, T., Itoh, F., Suzuki, K., Hirai, T. (1983) ESCA study of amorphous CVD Si3N4-C composites. Journal of Materials Science Letters, 2 (12) 805-807 doi:10.1007/bf00720564

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Reference TypeJournal (article/letter/editorial)
TitleESCA study of amorphous CVD Si3N4-C composites
JournalJournal of Materials Science Letters
AuthorsGoto, T.Author
Itoh, F.Author
Suzuki, K.Author
Hirai, T.Author
Year1983 (December)Volume2
Issue12
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00720564Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16408526Long-form Identifiermindat:1:5:16408526:8
GUID0
Full ReferenceGoto, T., Itoh, F., Suzuki, K., Hirai, T. (1983) ESCA study of amorphous CVD Si3N4-C composites. Journal of Materials Science Letters, 2 (12) 805-807 doi:10.1007/bf00720564
Plain TextGoto, T., Itoh, F., Suzuki, K., Hirai, T. (1983) ESCA study of amorphous CVD Si3N4-C composites. Journal of Materials Science Letters, 2 (12) 805-807 doi:10.1007/bf00720564
In(1983, December) Journal of Materials Science Letters Vol. 2 (12) Springer Science and Business Media LLC

See Also

These are possibly similar items as determined by title/reference text matching only.

Goto, Takashi, Hirai, Toshio (1988) ESCA study of amorphous CVD Si3N4-BN composites. Journal of Materials Science Letters, 7 (5) 548-550 doi:10.1007/bf01730723
Goto, Takashi, Hirai, Toshio (1983) Etching of chemically vapour-deposited amorphous Si3N4-C composites in HF solution. Journal of Materials Science, 18. 3387-3392 doi:10.1007/bf00544164
Goto, Takashi, Hirai, Toshio (1983) D.C. electrical conductivity of amorphous Si3N4-C composites prepared by chemical vapour deposition. Journal of Materials Science, 18. 383-390 doi:10.1007/bf00560626
Hirai, Toshio, Goto, Takashi (1981) Density and deposition rates of amorphous CVD-Si3N4 including carbon. Journal of Materials Science, 16. 2877-2882 doi:10.1007/bf02402853
HIRAI, T., NIIHARA, K., GOTO, T. (1980) ChemInform Abstract: OXIDATION OF CVD SILICON NITRIDE (SI3N4) AT 1550° TO 1650°C. Chemischer Informationsdienst, 11 (46) doi:10.1002/chin.198046032
Misawa, M., Fukunaga, T., Niihara, K., Hirai, T., Suzuki, K. (1979) Structure characterization of CVD amorphous Si3N4 by pulsed neutron total scattering. Journal of Non-Crystalline Solids, 34 (3) 313-321 doi:10.1016/0022-3093(79)90018-8
Hirai, Toshio, Goto, Takashi (1981) Preparation of amorphous Si3N4-C plate by chemical vapour deposition. Journal of Materials Science, 16. 17-23 doi:10.1007/bf00552054
Goto, Takashi, Hirai, Toshio (1987) High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition. Journal of Materials Science, 22. 2842-2846 doi:10.1007/bf01086480
Mukaida, M., Goto, T., Hirai, T. (1991) Preferred orientation of TiB2 plates prepared by CVD of the TiCl4 + B2H6 system. Journal of Materials Science, 26. 6613-6617 doi:10.1007/bf02402653
Hirai, Toshio, Niihara, Koichi, Goto, Takashi (1977) Rapid chemical vapour-deposition of Si3N4. Journal of Materials Science, 12. 631-632 doi:10.1007/bf00540292
Wang, Y., Sasaki, M., Goto, T., Hirai, T. (1990) Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition. Journal of Materials Science, 25. 4607-4613 doi:10.1007/bf01129914
 
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