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Ishii, H, Shinagawa, T, Tanaka, S, Okumura, T (2000) Characterization of oxygen-related defects in p-Al0.3Ga0.7As by DLTS. Journal of Crystal Growth, 210 (1). 242-246 doi:10.1016/s0022-0248(99)00688-0

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of oxygen-related defects in p-Al0.3Ga0.7As by DLTS
JournalJournal of Crystal Growth
AuthorsIshii, HAuthor
Shinagawa, TAuthor
Tanaka, SAuthor
Okumura, TAuthor
Year2000 (March)Volume210
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(99)00688-0Search in ResearchGate
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Mindat Ref. ID2852171Long-form Identifiermindat:1:5:2852171:4
GUID0
Full ReferenceIshii, H, Shinagawa, T, Tanaka, S, Okumura, T (2000) Characterization of oxygen-related defects in p-Al0.3Ga0.7As by DLTS. Journal of Crystal Growth, 210 (1). 242-246 doi:10.1016/s0022-0248(99)00688-0
Plain TextIshii, H, Shinagawa, T, Tanaka, S, Okumura, T (2000) Characterization of oxygen-related defects in p-Al0.3Ga0.7As by DLTS. Journal of Crystal Growth, 210 (1). 242-246 doi:10.1016/s0022-0248(99)00688-0
In(2000, March) Journal of Crystal Growth Vol. 210 (1) Elsevier BV

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Sandhu, A, Ogikubo, T, Goto, H, Csapo, V, Pavelka, T (2000) Investigation of deep levels and precipitates related to molybdenum in silicon by DLTS and scanning infrared microscopy. Journal of Crystal Growth, 210 (1). 116-121 doi:10.1016/s0022-0248(99)00663-6
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Murai, A, Oyama, Y, Nishizawa, J (2000) Stoichiometry and Te related defect in n-Al0.3Ga0.7As. Journal of Crystal Growth, 210 (1). 251-254 doi:10.1016/s0022-0248(99)00690-9
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Kakimoto, K., Umehara, T., Ozoe, H. (2000) Molecular dynamics analysis on diffusion of point defects. Journal of Crystal Growth, 210 (1). 54-59 doi:10.1016/s0022-0248(99)00646-6
Frigeri, C, Weyher, J.L, Müller, S, Hiesinger, P (2000) Analysis of peculiar structural defects created in GaAs by diffusion of copper. Journal of Crystal Growth, 210 (1). 177-181 doi:10.1016/s0022-0248(99)00674-0
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