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Tokuda, Y, Kamiya, K, Okumura, T (2000) Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance–voltage transient spectroscopy. Journal of Crystal Growth, 210 (1). 260-263 doi:10.1016/s0022-0248(99)00692-2

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance–voltage transient spectroscopy
JournalJournal of Crystal Growth
AuthorsTokuda, YAuthor
Kamiya, KAuthor
Okumura, TAuthor
Year2000 (March)Volume210
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(99)00692-2Search in ResearchGate
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Mindat Ref. ID2852191Long-form Identifiermindat:1:5:2852191:8
GUID0
Full ReferenceTokuda, Y, Kamiya, K, Okumura, T (2000) Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance–voltage transient spectroscopy. Journal of Crystal Growth, 210 (1). 260-263 doi:10.1016/s0022-0248(99)00692-2
Plain TextTokuda, Y, Kamiya, K, Okumura, T (2000) Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance–voltage transient spectroscopy. Journal of Crystal Growth, 210 (1). 260-263 doi:10.1016/s0022-0248(99)00692-2
In(2000, March) Journal of Crystal Growth Vol. 210 (1) Elsevier BV

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