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Murai, A, Oyama, Y, Nishizawa, J (2000) Stoichiometry and Te related defect in n-Al0.3Ga0.7As. Journal of Crystal Growth, 210 (1). 251-254 doi:10.1016/s0022-0248(99)00690-9

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Reference TypeJournal (article/letter/editorial)
TitleStoichiometry and Te related defect in n-Al0.3Ga0.7As
JournalJournal of Crystal Growth
AuthorsMurai, AAuthor
Oyama, YAuthor
Nishizawa, JAuthor
Year2000 (March)Volume210
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(99)00690-9Search in ResearchGate
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Mindat Ref. ID2852181Long-form Identifiermindat:1:5:2852181:1
GUID0
Full ReferenceMurai, A, Oyama, Y, Nishizawa, J (2000) Stoichiometry and Te related defect in n-Al0.3Ga0.7As. Journal of Crystal Growth, 210 (1). 251-254 doi:10.1016/s0022-0248(99)00690-9
Plain TextMurai, A, Oyama, Y, Nishizawa, J (2000) Stoichiometry and Te related defect in n-Al0.3Ga0.7As. Journal of Crystal Growth, 210 (1). 251-254 doi:10.1016/s0022-0248(99)00690-9
In(2000, March) Journal of Crystal Growth Vol. 210 (1) Elsevier BV

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Sakurai, F, Suto, K, Oyama, Y, Nishizawa, J (2000) n-Type ZnSe crystal growth by MOVPE under atmospheric pressure with UV irradiation on stoichiometry-controlled p-type ZnSe crystals. Journal of Crystal Growth, 214. 537-541 doi:10.1016/s0022-0248(00)00147-0
Ishii, H, Shinagawa, T, Tanaka, S, Okumura, T (2000) Characterization of oxygen-related defects in p-Al0.3Ga0.7As by DLTS. Journal of Crystal Growth, 210 (1). 242-246 doi:10.1016/s0022-0248(99)00688-0
Murai, Akihiko, Oyama, Yutaka, Nishizawa, Jun-ichi (2000) Photocapacitive detection of hole emission from DX center in n-type Al0.3Ga0.7As doped with Te. Journal of Applied Physics, 87 (1). 223-227 doi:10.1063/1.371848
Murai, Akihiko, Nishizawa, Jun-ichi, Oyama, Yutaka, Suto, Ken, Chubachi, Noriyoshi (1996) Effect of stoichiometry on the dominant deep levels in liquid phase epitaxially grown n-type Al0.3Ga0.7As doped with Te. Journal of Applied Physics, 79 (8). 3930pp. doi:10.1063/1.361880
Nishizawa, J, Murai, A, Ohizumi, T, Kurabayashi, T, Ohtsuka, K, Yoshida, T (2000) Observation and control of surface reaction during Si molecular layer growth. Journal of Crystal Growth, 209 (2). 327-330 doi:10.1016/s0022-0248(99)00564-3
Nakamura, K, Saishoji, T, Tomioka, J (2000) Simulation of point defect distributions in silicon crystals during melt-growth. Journal of Crystal Growth, 210 (1). 49-53 doi:10.1016/s0022-0248(99)00645-4
von Känel, H, Meyer, T (2000) Nano-scale defect analysis by BEEM. Journal of Crystal Growth, 210 (1). 401-407 doi:10.1016/s0022-0248(99)00719-8
Ogita, Y, Kobayashi, K, Daio, H (2000) Photoconductivity characterization of silicon wafer mirror-polishing subsurface damage related to gate oxide integrity. Journal of Crystal Growth, 210 (1). 36-39 doi:10.1016/s0022-0248(99)00642-9
Tokuda, Y, Kamiya, K, Okumura, T (2000) Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance–voltage transient spectroscopy. Journal of Crystal Growth, 210 (1). 260-263 doi:10.1016/s0022-0248(99)00692-2
Oyama, Yutaka, Nishizawa, Jun-ichi, Seo, Kohichi, Suto, Ken (2000) X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grown by intermittent injection of TEGa/AsH3 in ultra high vacuum. Journal of Crystal Growth, 213 (3). 221-228 doi:10.1016/s0022-0248(00)00386-9
Ohtsuka, K, Yoshida, T, Oizumi, T, Murai, A, Kurabayashi, T, Nishizawa, J (2000) Low-temperature deposition of Si and SiO2 thin-film layers in an ultrahigh vacuum system. Journal of Crystal Growth, 209 (2). 331-334 doi:10.1016/s0022-0248(99)00565-5
 
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