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Khan, Aurangzeb, Yamaguchi, Masafumi, Takamoto, Tatsuya, de Angelis, N, Bourgoin, J.C (2000) Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells. Journal of Crystal Growth, 210 (1). 264-267 doi:10.1016/s0022-0248(99)00693-4

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Reference TypeJournal (article/letter/editorial)
TitleRecombination centers in electron irradiated GaInP: application to the degradation of space solar cells
JournalJournal of Crystal Growth
AuthorsKhan, AurangzebAuthor
Yamaguchi, MasafumiAuthor
Takamoto, TatsuyaAuthor
de Angelis, NAuthor
Bourgoin, J.CAuthor
Year2000 (March)Volume210
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(99)00693-4Search in ResearchGate
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Mindat Ref. ID2852196Long-form Identifiermindat:1:5:2852196:3
GUID0
Full ReferenceKhan, Aurangzeb, Yamaguchi, Masafumi, Takamoto, Tatsuya, de Angelis, N, Bourgoin, J.C (2000) Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells. Journal of Crystal Growth, 210 (1). 264-267 doi:10.1016/s0022-0248(99)00693-4
Plain TextKhan, Aurangzeb, Yamaguchi, Masafumi, Takamoto, Tatsuya, de Angelis, N, Bourgoin, J.C (2000) Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells. Journal of Crystal Growth, 210 (1). 264-267 doi:10.1016/s0022-0248(99)00693-4
In(2000, March) Journal of Crystal Growth Vol. 210 (1) Elsevier BV

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Khan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., de Angelis, N., Takamoto, Tatsuya (2000) Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells. Applied Physics Letters, 76 (18). 2559-2561 doi:10.1063/1.126407
Khan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Takamoto, Tatsuya (2002) Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells. Journal of Applied Physics, 91 (4). 2391-2397 doi:10.1063/1.1433936
Khan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Ando, Koshi, Takamoto, Tatsuya (2001) Recombination enhanced defect reactions in 1 MeV electron irradiatedpInGaP. Journal of Applied Physics, 89 (8). 4263-4268 doi:10.1063/1.1353806
Khan, Aurangzeb, Yamaguchi, Masafumi, Dharmaso, Nothaj, Bourgoin, Jacques, Ando, Koshi, Takamoto, Tatsuya (2002) Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells. Japanese Journal of Applied Physics, 41. 1241-1246 doi:10.1143/jjap.41.1241
Khan, Aurangzeb, Yamaguchi, Masafumi, Takamoto, Tatsuya (2004) Performance of single-junction and dual-junction InGaP∕GaAs solar cells under low concentration ratios. Applied Physics Letters, 85 (15). 3098-3100 doi:10.1063/1.1802371
Dharmarasu, Nethaji, Yamaguchi, Masafumi, Bourgoin, Jacques C., Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sumio (2002) Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells. Applied Physics Letters, 81 (1). 64-66 doi:10.1063/1.1491005
Nagai, N, Ishida, H, Hisamatsu, T, Aburaya, T, Matsuda, S (2000) FT-IR study of electron- or proton-irradiated Si crystals for solar cells. Journal of Crystal Growth, 210 (1). 74-79 doi:10.1016/s0022-0248(99)00650-8
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Shono, Y, Oka, T (2000) Complex defects in electron-irradiated ZnS. Journal of Crystal Growth, 210 (1). 278-282 doi:10.1016/s0022-0248(99)00696-x
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Kash, J.A, Tsang, J.C (2000) Watching chips work: picosecond hot electron light emission from integrated circuits. Journal of Crystal Growth, 210 (1). 318-322 doi:10.1016/s0022-0248(99)00704-6
 
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