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Khan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Takamoto, Tatsuya (2002) Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells. Journal of Applied Physics, 91 (4). 2391-2397 doi:10.1063/1.1433936

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Reference TypeJournal (article/letter/editorial)
TitleThermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells
JournalJournal of Applied Physics
AuthorsKhan, AurangzebAuthor
Yamaguchi, MasafumiAuthor
Bourgoin, Jacques C.Author
Takamoto, TatsuyaAuthor
Year2002 (February 15)Volume91
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1433936Search in ResearchGate
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Mindat Ref. ID5113750Long-form Identifiermindat:1:5:5113750:4
GUID0
Full ReferenceKhan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Takamoto, Tatsuya (2002) Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells. Journal of Applied Physics, 91 (4). 2391-2397 doi:10.1063/1.1433936
Plain TextKhan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Takamoto, Tatsuya (2002) Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells. Journal of Applied Physics, 91 (4). 2391-2397 doi:10.1063/1.1433936
In(2002, February) Journal of Applied Physics Vol. 91 (4) AIP Publishing

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Khan, Aurangzeb, Yamaguchi, Masafumi, Dharmaso, Nothaj, Bourgoin, Jacques, Ando, Koshi, Takamoto, Tatsuya (2002) Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells. Japanese Journal of Applied Physics, 41. 1241-1246 doi:10.1143/jjap.41.1241
Khan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., de Angelis, N., Takamoto, Tatsuya (2000) Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells. Applied Physics Letters, 76 (18). 2559-2561 doi:10.1063/1.126407
Khan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Ando, Koshi, Takamoto, Tatsuya (2001) Recombination enhanced defect reactions in 1 MeV electron irradiatedpInGaP. Journal of Applied Physics, 89 (8). 4263-4268 doi:10.1063/1.1353806
Dharmarasu, Nethaji, Khan, A., Yamaguchi, Masafumi, Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sumio (2002) Effects of proton irradiation on n+p InGaP solar cells. Journal of Applied Physics, 91 (5). 3306-3311 doi:10.1063/1.1445276
Dharmarasu, Nethaji, Yamaguchi, Masafumi, Bourgoin, Jacques C., Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sumio (2002) Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells. Applied Physics Letters, 81 (1). 64-66 doi:10.1063/1.1491005
Khan, Aurangzeb, Yamaguchi, Masafumi, Takamoto, Tatsuya (2004) Performance of single-junction and dual-junction InGaP∕GaAs solar cells under low concentration ratios. Applied Physics Letters, 85 (15). 3098-3100 doi:10.1063/1.1802371
Khan, Aurangzeb, Yamaguchi, Masafumi, Takamoto, Tatsuya, de Angelis, N, Bourgoin, J.C (2000) Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells. Journal of Crystal Growth, 210 (1). 264-267 doi:10.1016/s0022-0248(99)00693-4
Dharmarasu, Nethaji, Yamaguchi, Masafumi, Khan, Aurangzeb, Yamada, Takashi, Tanabe, Tatsuya, Takagishi, Shigenori, Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sumio (2001) High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells. Applied Physics Letters, 79 (15). 2399-2401 doi:10.1063/1.1409270
Yamaguchi, Masafumi, Khan, Aurangzeb, Taylor, Stephen J., Ando, Koshi, Yamaguchi, Tsutomu, Matsuda, Sumio, Aburaya, Takashi (1999) Deep level analysis of radiation-induced defects in Si crystals and solar cells. Journal of Applied Physics, 86 (1). 217-223 doi:10.1063/1.370698
Yamaguchi, Masafumi, Takamoto, Tatsuya, Taylor, Stephen J., Walters, Robert J., Summers, Geoffrey P., Flood, Dennis J., Ohmori, Masamichi (1997) Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation. Journal of Applied Physics, 81 (9). 6013-6018 doi:10.1063/1.364449
Yamaguchi, Masafumi, Takamoto, Tatsuya, Ohmori, Masamichi (1997) Analysis of the anomalous spectral response of InP solar cells induced by high fluence proton irradiation. Journal of Applied Physics, 81 (3). 1116-1119 doi:10.1063/1.363855
 
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