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Khan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Ando, Koshi, Takamoto, Tatsuya (2001) Recombination enhanced defect reactions in 1 MeV electron irradiatedpInGaP. Journal of Applied Physics, 89 (8). 4263-4268 doi:10.1063/1.1353806

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Reference TypeJournal (article/letter/editorial)
TitleRecombination enhanced defect reactions in 1 MeV electron irradiatedpInGaP
JournalJournal of Applied Physics
AuthorsKhan, AurangzebAuthor
Yamaguchi, MasafumiAuthor
Bourgoin, Jacques C.Author
Ando, KoshiAuthor
Takamoto, TatsuyaAuthor
Year2001 (April 15)Volume89
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1353806Search in ResearchGate
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Mindat Ref. ID5108594Long-form Identifiermindat:1:5:5108594:6
GUID0
Full ReferenceKhan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Ando, Koshi, Takamoto, Tatsuya (2001) Recombination enhanced defect reactions in 1 MeV electron irradiatedpInGaP. Journal of Applied Physics, 89 (8). 4263-4268 doi:10.1063/1.1353806
Plain TextKhan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Ando, Koshi, Takamoto, Tatsuya (2001) Recombination enhanced defect reactions in 1 MeV electron irradiatedpInGaP. Journal of Applied Physics, 89 (8). 4263-4268 doi:10.1063/1.1353806
In(2001, April) Journal of Applied Physics Vol. 89 (8) AIP Publishing

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Khan, Aurangzeb, Yamaguchi, Masafumi, Dharmaso, Nothaj, Bourgoin, Jacques, Ando, Koshi, Takamoto, Tatsuya (2002) Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells. Japanese Journal of Applied Physics, 41. 1241-1246 doi:10.1143/jjap.41.1241
Khan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., Takamoto, Tatsuya (2002) Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells. Journal of Applied Physics, 91 (4). 2391-2397 doi:10.1063/1.1433936
Khan, Aurangzeb, Yamaguchi, Masafumi, Bourgoin, Jacques C., de Angelis, N., Takamoto, Tatsuya (2000) Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells. Applied Physics Letters, 76 (18). 2559-2561 doi:10.1063/1.126407
Khan, Aurangzeb, Yamaguchi, Masafumi, Takamoto, Tatsuya, de Angelis, N, Bourgoin, J.C (2000) Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells. Journal of Crystal Growth, 210 (1). 264-267 doi:10.1016/s0022-0248(99)00693-4
Yamaguchi, Masafumi, Khan, Aurangzeb, Taylor, Stephen J., Ando, Koshi, Yamaguchi, Tsutomu, Matsuda, Sumio, Aburaya, Takashi (1999) Deep level analysis of radiation-induced defects in Si crystals and solar cells. Journal of Applied Physics, 86 (1). 217-223 doi:10.1063/1.370698
Khan, Aurangzeb, Yamaguchi, Masafumi, Takamoto, Tatsuya (2004) Performance of single-junction and dual-junction InGaP∕GaAs solar cells under low concentration ratios. Applied Physics Letters, 85 (15). 3098-3100 doi:10.1063/1.1802371
Yamaguchi, Masafumi, Takamoto, Tatsuya, EijiIkeda, , Kurita, Hiroshi, MasamichiOhmori, , Ando, Koshi, CarlosVargasAburto, (1995) Radiation Resistance of InP-Related Materials. Japanese Journal of Applied Physics, 34. 6222-6225 doi:10.1143/jjap.34.6222
Dharmarasu, Nethaji, Yamaguchi, Masafumi, Khan, Aurangzeb, Yamada, Takashi, Tanabe, Tatsuya, Takagishi, Shigenori, Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sumio (2001) High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells. Applied Physics Letters, 79 (15). 2399-2401 doi:10.1063/1.1409270
Dharmarasu, Nethaji, Yamaguchi, Masafumi, Bourgoin, Jacques C., Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sumio (2002) Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells. Applied Physics Letters, 81 (1). 64-66 doi:10.1063/1.1491005
Khan, Aurangzeb, Yamaguchi, Masafumi, Hisamatsu, Tadashi, Matsuda, Sumio (2000) Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation. Journal of Applied Physics, 87 (5). 2162-2168 doi:10.1063/1.372156
Ando, Koshi, Yamaguchi, Masafumi, Uemura, Chikao (1986) Nonradiative-recombination-enhanced defect-structure transformation in low-temperatureγ-ray-irradiated InP. Physical Review B, 34 (4) 3041-3044 doi:10.1103/physrevb.34.3041
 
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