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Kwo, J., Hong, M., Busch, B., Muller, D.A., Chabal, Y.J., Kortan, A.R., Mannaerts, J.P., Yang, B., Ye, P., Gossmann, H., Sergent, A.M., Ng, K.K., Bude, J., Schulte, W.H., Garfunkel, E., Gustafsson, T. (2003) Advances in high κ gate dielectrics for Si and III–V semiconductors. Journal of Crystal Growth, 251 (1). 645-650 doi:10.1016/s0022-0248(02)02192-9

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Reference TypeJournal (article/letter/editorial)
TitleAdvances in high κ gate dielectrics for Si and III–V semiconductors
JournalJournal of Crystal Growth
AuthorsKwo, J.Author
Hong, M.Author
Busch, B.Author
Muller, D.A.Author
Chabal, Y.J.Author
Kortan, A.R.Author
Mannaerts, J.P.Author
Yang, B.Author
Ye, P.Author
Gossmann, H.Author
Sergent, A.M.Author
Ng, K.K.Author
Bude, J.Author
Schulte, W.H.Author
Garfunkel, E.Author
Gustafsson, T.Author
Year2003 (April)Volume251
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(02)02192-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2872009Long-form Identifiermindat:1:5:2872009:6
GUID0
Full ReferenceKwo, J., Hong, M., Busch, B., Muller, D.A., Chabal, Y.J., Kortan, A.R., Mannaerts, J.P., Yang, B., Ye, P., Gossmann, H., Sergent, A.M., Ng, K.K., Bude, J., Schulte, W.H., Garfunkel, E., Gustafsson, T. (2003) Advances in high κ gate dielectrics for Si and III–V semiconductors. Journal of Crystal Growth, 251 (1). 645-650 doi:10.1016/s0022-0248(02)02192-9
Plain TextKwo, J., Hong, M., Busch, B., Muller, D.A., Chabal, Y.J., Kortan, A.R., Mannaerts, J.P., Yang, B., Ye, P., Gossmann, H., Sergent, A.M., Ng, K.K., Bude, J., Schulte, W.H., Garfunkel, E., Gustafsson, T. (2003) Advances in high κ gate dielectrics for Si and III–V semiconductors. Journal of Crystal Growth, 251 (1). 645-650 doi:10.1016/s0022-0248(02)02192-9
In(2003, April) Journal of Crystal Growth Vol. 251 (1) Elsevier BV

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Yang, B, Ye, P.D, Kwo, J, Frei, M.R, Gossmann, H.-J.L, Mannaerts, J.P, Sergent, M, Hong, M, Ng, K, Bude, J (2003) Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric. Journal of Crystal Growth, 251 (1). 837-842 doi:10.1016/s0022-0248(02)02273-x
Busch, B. W., Kwo, J., Hong, M., Mannaerts, J. P., Sapjeta, B. J., Schulte, W. H., Garfunkel, E., Gustafsson, T. (2001) Interface reactions of high-κ Y2O3 gate oxides with Si. Applied Physics Letters, 79 (15). 2447-2449 doi:10.1063/1.1406989
Kwo, J., Hong, M., Kortan, A. R., Queeney, K. T., Chabal, Y. J., Mannaerts, J. P., Boone, T., Krajewski, J. J., Sergent, A. M., Rosamilia, J. M. (2000) High ε gate dielectrics Gd2O3 and Y2O3 for silicon. Applied Physics Letters, 77 (1). 130-132 doi:10.1063/1.126899
Kwo, J., Hong, M., Kortan, A. R., Queeney, K. L., Chabal, Y. J., Opila, R. L., Muller, D. A., Chu, S. N. G., Sapjeta, B. J., Lay, T. S., Mannaerts, J. P., Boone, T., Krautter, H. W., Krajewski, J. J., Sergnt, A. M., Rosamilia, J. M. (2001) Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si. Journal of Applied Physics, 89 (7). 3920-3927 doi:10.1063/1.1352688
Hong, M., Chen, H.S., Kwo, J., Kortan, A.R., Mannaerts, J.P., Weir, B.E., Feldman, L.C. (1991) MBE growth and properties of Fe3(Al,Si) on GaAs(100). Journal of Crystal Growth, 111 (1). 984-988 doi:10.1016/0022-0248(91)91119-u
Lee, W.C., Lee, Y.J., Wu, Y.D., Chang, P., Huang, Y.L., Hsu, Y.L., Mannaerts, J.P., Lo, R.L., Chen, F.R., Maikap, S., Lee, L.S., Hsieh, W.Y., Tsai, M.J., Lin, S.Y., Gustffson, T., Hong, M., Kwo, J. (2005) MBE-grown high gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics. Journal of Crystal Growth, 278 (1). 619-623 doi:10.1016/j.jcrysgro.2004.12.127
Maria, J.-P., Wicaksana, D., Kingon, A. I., Busch, B., Schulte, H., Garfunkel, E., Gustafsson, T. (2001) High temperature stability in lanthanum and zirconia-based gate dielectrics. Journal of Applied Physics, 90 (7). 3476-3482 doi:10.1063/1.1391418
Ye, P. D., Wilk, G. D., Yang, B., Kwo, J., Chu, S. N. G., Nakahara, S., Gossmann, H.-J. L., Mannaerts, J. P., Hong, M., Ng, K. K., Bude, J. (2003) GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition. Applied Physics Letters, 83 (1). 180-182 doi:10.1063/1.1590743
Ye, P. D., Wilk, G. D., Yang, B., Kwo, J., Gossmann, H.-J. L., Hong, M., Ng, K. K., Bude, J. (2004) Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition. Applied Physics Letters, 84 (3). 434-436 doi:10.1063/1.1641527
Hong, M., Kortan, A. R., Chang, P., Huang, Y. L., Chen, C. P., Chou, H. Y., Lee, H. Y., Kwo, J., Chu, M.-W., Chen, C. H., Goncharova, L. V., Garfunkel, E., Gustafsson, T. (2005) High-quality nanothickness single-crystal Sc2O3 film grown on Si(111). Applied Physics Letters, 87 (25). 251902pp. doi:10.1063/1.2147711
Ohno, Hideo (2003) Molecular beam epitaxy and properties of ferromagnetic III–V semiconductors. Journal of Crystal Growth, 251 (1). 285-291 doi:10.1016/s0022-0248(02)02290-x
 
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