Kwo, J., Hong, M., Kortan, A. R., Queeney, K. L., Chabal, Y. J., Opila, R. L., Muller, D. A., Chu, S. N. G., Sapjeta, B. J., Lay, T. S., Mannaerts, J. P., Boone, T., Krautter, H. W., Krajewski, J. J., Sergnt, A. M., Rosamilia, J. M. (2001) Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si. Journal of Applied Physics, 89 (7). 3920-3927 doi:10.1063/1.1352688

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Reference Type	Journal (article/letter/editorial)
Title	Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
Journal	Journal of Applied Physics
Authors	Kwo, J.		Author
	Hong, M.		Author
	Kortan, A. R.		Author
	Queeney, K. L.		Author
	Chabal, Y. J.		Author
	Opila, R. L.		Author
	Muller, D. A.		Author
	Chu, S. N. G.		Author
	Sapjeta, B. J.		Author
	Lay, T. S.		Author
	Mannaerts, J. P.		Author
	Boone, T.		Author
	Krautter, H. W.		Author
	Krajewski, J. J.		Author
	Sergnt, A. M.		Author
	Rosamilia, J. M.		Author
Year	2001 (April)	Volume	89
Issue	7
Publisher	AIP Publishing
DOI	doi:10.1063/1.1352688Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	5108498	Long-form Identifier	mindat:1:5:5108498:3
GUID	0
Full Reference	Kwo, J., Hong, M., Kortan, A. R., Queeney, K. L., Chabal, Y. J., Opila, R. L., Muller, D. A., Chu, S. N. G., Sapjeta, B. J., Lay, T. S., Mannaerts, J. P., Boone, T., Krautter, H. W., Krajewski, J. J., Sergnt, A. M., Rosamilia, J. M. (2001) Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si. Journal of Applied Physics, 89 (7). 3920-3927 doi:10.1063/1.1352688
Plain Text	Kwo, J., Hong, M., Kortan, A. R., Queeney, K. L., Chabal, Y. J., Opila, R. L., Muller, D. A., Chu, S. N. G., Sapjeta, B. J., Lay, T. S., Mannaerts, J. P., Boone, T., Krautter, H. W., Krajewski, J. J., Sergnt, A. M., Rosamilia, J. M. (2001) Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si. Journal of Applied Physics, 89 (7). 3920-3927 doi:10.1063/1.1352688
In	(2001, April) Journal of Applied Physics Vol. 89 (7) AIP Publishing

	Kwo, J., Hong, M., Kortan, A. R., Queeney, K. T., Chabal, Y. J., Mannaerts, J. P., Boone, T., Krajewski, J. J., Sergent, A. M., Rosamilia, J. M. (2000) High ε gate dielectrics Gd2O3 and Y2O3 for silicon. Applied Physics Letters, 77 (1). 130-132 doi:10.1063/1.126899
	Busch, B. W., Kwo, J., Hong, M., Mannaerts, J. P., Sapjeta, B. J., Schulte, W. H., Garfunkel, E., Gustafsson, T. (2001) Interface reactions of high-κ Y2O3 gate oxides with Si. Applied Physics Letters, 79 (15). 2447-2449 doi:10.1063/1.1406989
	Queeney, K. T., Weldon, M. K., Chang, J. P., Chabal, Y. J., Gurevich, A. B., Sapjeta, J., Opila, R. L. (2000) Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon. Journal of Applied Physics, 87 (3). 1322-1330 doi:10.1063/1.372017
	Hong, M., Lu, Z. H., Kwo, J., Kortan, A. R., Mannaerts, J. P., Krajewski, J. J., Hsieh, K. C., Chou, L. J., Cheng, K. Y. (2000) Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states. Applied Physics Letters, 76 (3). 312-314 doi:10.1063/1.125730
	Wu, S. Y., Hong, M., Kortan, A. R., Kwo, J., Mannaerts, J. P., Lee, W. C., Huang, Y. L. (2005) High-quality thin single-crystal γ-Al2O3 films grown on Si (111). Applied Physics Letters, 87 (9). 91908pp. doi:10.1063/1.2037205
	Kwo, J., Hong, M., Busch, B., Muller, D.A., Chabal, Y.J., Kortan, A.R., Mannaerts, J.P., Yang, B., Ye, P., Gossmann, H., Sergent, A.M., Ng, K.K., Bude, J., Schulte, W.H., Garfunkel, E., Gustafsson, T. (2003) Advances in high κ gate dielectrics for Si and III–V semiconductors. Journal of Crystal Growth, 251 (1). 645-650 doi:10.1016/s0022-0248(02)02192-9
	Kwo, J., Murphy, D. W., Hong, M., Opila, R. L., Mannaerts, J. P., Sergent, A. M., Masaitis, R. L. (1999) Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films. Applied Physics Letters, 75 (8). 1116-1118 doi:10.1063/1.124614
	Lee, K. Y., Lee, W. C., Lee, Y. J., Huang, M. L., Chang, C. H., Wu, T. B., Hong, M., Kwo, J. (2006) Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics. Applied Physics Letters, 89 (22). 222906pp. doi:10.1063/1.2397542
	Gurevich, A. B., Weldon, M. K., Chabal, Y. J., Opila, R. L., Sapjeta, J. (1999) Thermal evolution of impurities in wet chemical silicon oxides. Applied Physics Letters, 74 (9). 1257-1259 doi:10.1063/1.123517
	Huang, Y. L., Chang, P., Yang, Z. K., Lee, Y. J., Lee, H. Y., Liu, H. J., Kwo, J., Mannaerts, J. P., Hong, M. (2005) Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface. Applied Physics Letters, 86 (19). 191905pp. doi:10.1063/1.1923172
	Kortan, A. R., Kopylov, N., Kwo, J., Hong, M., Chen, C. P., Mannaerts, J. P., Liou, S. H. (2006) Structure of Sc2O3 films epitaxially grown on α-Al2O3 (0001). Applied Physics Letters, 88 (2). 21906pp. doi:10.1063/1.2163989

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