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Busch, B. W., Kwo, J., Hong, M., Mannaerts, J. P., Sapjeta, B. J., Schulte, W. H., Garfunkel, E., Gustafsson, T. (2001) Interface reactions of high-κ Y2O3 gate oxides with Si. Applied Physics Letters, 79 (15). 2447-2449 doi:10.1063/1.1406989

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Reference TypeJournal (article/letter/editorial)
TitleInterface reactions of high-κ Y2O3 gate oxides with Si
JournalApplied Physics Letters
AuthorsBusch, B. W.Author
Kwo, J.Author
Hong, M.Author
Mannaerts, J. P.Author
Sapjeta, B. J.Author
Schulte, W. H.Author
Garfunkel, E.Author
Gustafsson, T.Author
Year2001 (October 8)Volume79
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.1406989Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8530145Long-form Identifiermindat:1:5:8530145:0
GUID0
Full ReferenceBusch, B. W., Kwo, J., Hong, M., Mannaerts, J. P., Sapjeta, B. J., Schulte, W. H., Garfunkel, E., Gustafsson, T. (2001) Interface reactions of high-κ Y2O3 gate oxides with Si. Applied Physics Letters, 79 (15). 2447-2449 doi:10.1063/1.1406989
Plain TextBusch, B. W., Kwo, J., Hong, M., Mannaerts, J. P., Sapjeta, B. J., Schulte, W. H., Garfunkel, E., Gustafsson, T. (2001) Interface reactions of high-κ Y2O3 gate oxides with Si. Applied Physics Letters, 79 (15). 2447-2449 doi:10.1063/1.1406989
In(2001, October) Applied Physics Letters Vol. 79 (15) AIP Publishing

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