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Cho, J–H, Cho, D–H, Lee, C–W, Kim, W–Y, Lim, S–H (2005) Characterization of Epitaxial Layer Defects in Silicon Wafers Using Focused Ion Beam and Transmission Electron Microscopy. Microscopy and Microanalysis, 11. doi:10.1017/s1431927605509000

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of Epitaxial Layer Defects in Silicon Wafers Using Focused Ion Beam and Transmission Electron Microscopy
JournalMicroscopy and Microanalysis
AuthorsCho, J–HAuthor
Cho, D–HAuthor
Lee, C–WAuthor
Kim, W–YAuthor
Lim, S–HAuthor
Year2005 (August)Volume11
PublisherCambridge University Press (CUP)
DOIdoi:10.1017/s1431927605509000Search in ResearchGate
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Mindat Ref. ID4830908Long-form Identifiermindat:1:5:4830908:6
GUID0
Full ReferenceCho, J–H, Cho, D–H, Lee, C–W, Kim, W–Y, Lim, S–H (2005) Characterization of Epitaxial Layer Defects in Silicon Wafers Using Focused Ion Beam and Transmission Electron Microscopy. Microscopy and Microanalysis, 11. doi:10.1017/s1431927605509000
Plain TextCho, J–H, Cho, D–H, Lee, C–W, Kim, W–Y, Lim, S–H (2005) Characterization of Epitaxial Layer Defects in Silicon Wafers Using Focused Ion Beam and Transmission Electron Microscopy. Microscopy and Microanalysis, 11. doi:10.1017/s1431927605509000
In(2005) Microscopy and Microanalysis Vol. 11. Cambridge University Press (CUP)

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